Results 101 to 110 of about 7,647 (298)

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source

An investigation on the formation mechanism of nano ZrB2 powder by a magnesiothermic reaction [PDF]

, 2014
Nanocrystalline zirconium diboride (ZrB2) powder was produced by mechanochemistry from the magnesiothermic reduction in the Mg/ZrO 2/B2O3 system. The use of high-energy milling conditions was essential to induce a mechanically induced self-sustaining ...
Bafghi, M. Sh, Gotor Martínez, Francisco José, Jalaly, M., Tamizifar, M.   +3 more
core   +1 more source

Observation of inhomogeneous oxygen distribution in electric-field-cycled Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition

Journal of Advanced Dielectrics
This study investigates the impact of ion distribution, with a particular focus on oxygen ions, on the stability and phase transformation processes of the hafnium zirconium oxide (HZO) ferroelectric phase.
Yilong Liu, Zhe Yu, Yao Wu, Yanjie Zhao, Lu Liu, Shiqing Deng, Shi Liu, Wen Dong   +7 more
doaj   +1 more source

Electro‐Chemo‐Mechanical Coupling in Composite Cathodes of Sulfide‐Based All‐Solid‐State Batteries: Pathways, Degradation, and Design Rules

Advanced Science, EarlyView.
This review provides an integrated framework for achieving superior electrochemical performance in sulfide‐based all‐solid‐state batteries. It first delineates mechano‐electrochemical failure modes of cathode active materials and solid electrolytes, then outlines engineering principles for particle morphology, electronic and ionic conduction, and ...
Gawon Song, Seonghyun Lee, Minseon Lee, Junsung Park, Kyu Tae Lee   +4 more
wiley   +1 more source

Ternary boride product and process [PDF]

, 1976
A hard, tough, strong ceramic body is formed by hot pressing a mixture of a powdered metal and a powdered metal diboride. The metal employed is zirconium, titanium or hafnium and the diboride is the diboride of a different member of the same group of ...
Clougherty, Edward V.
core   +1 more source

Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories

Advanced Electronic Materials
Hafnium oxide (HfO2) exhibits multiple polymorphs, each with distinct properties and is a promising material for non‐volatile memory technologies in radiation‐harsh environments.
Philipp Schreyer, David Lehninger, Tobias Vogel, Tianren Zhang, Taewook Kim, Eszter Piros, Yingxin Li, Yu Duan, Maximilian Lederer, Konrad Seidel, Christina Trautmann, Eugenia Toimil‐Molares, Lambert Alff   +12 more
doaj   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

Preparation of refractory cermet structures for lithium compatibility testing [PDF]

High-purity nitride and carbide cermets were synthesized for compatability testing in liquid lithium. A process was developed for the preparation of high-purity hafnium nitride powder, which was subsequently blended with tungsten powder or tantalum ...
Heestand, R. L., Jones, R. A., Kizer, D. E., Wright, T. R.   +3 more
core   +1 more source

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials, EarlyView.
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
wiley   +1 more source