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Nanocrystalline Zinc-Oxide-Embedded Zirconium-Doped Hafnium Oxide for Nonvolatile Memories
Journal of The Electrochemical Society, 2008Memory devices containing nanocrystalline ZnO-embedded Zr-doped HfO 2 high-k dielectric film have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance-voltage hysteresis, e.g., 1.22 at ±6 V gate bias, and negative differential resistance region in the positive bias current-voltage range.
Jiang Lu, Chen-Han Lin, Yue Kuo
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Charge transport in thin hafnium and zirconium oxide films
Optoelectronics, Instrumentation and Data Processing, 2017The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the ...
D. R. Islamov, V. A. Gritsenko, A. Chin
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Intrinsic Paramagnetic Defects in Zirconium and Hafnium Oxide Films
MRS Proceedings, 2012ABSTRACTThin films of zirconium oxide (ZrOx) and hafnium oxide (HfOx) were rf sputtered onto fused silica substrates in an oxygen rich argon environment. Pure zirconium and hafnium targets were used, and the oxygen partial pressure was varied to control the oxygen stoichiometry.
Robert N. Schwartz +4 more
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Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure optimization and ultrafast electrical pulse measurement setup.
X. Lyu +4 more
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Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors
Journal of Applied Physics, 2021Imprint, the preferential orientation of the polarization of a ferroelectric device subjected to elevated temperatures, is a primary reliability concern afflicting data retention in ferroelectric RAM. In this paper, we demonstrate Preisach-based hysteresis modeling, which can be used to predict imprint behavior in ferroelectric thin films. A method was
Paul Chojecki +3 more
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Trivalent zirconium and hafnium ions in yttrium oxide ceramics
Optics and Spectroscopy, 2014An analysis of the electron spin resonance (ESR) spectrum of transparent ceramics composed of yttrium oxide with zirconium and hafnium additives has revealed the presence of signals (with similar parameters) from Zr3+ and Hf3+ ions, which have a similar electron configurations of the ground states: [Kr]4d 1 and [Xe]5d 1,
V. I. Solomonov +3 more
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Chemical Vapor Deposition Precursors for High Dielectric Oxides: Zirconium and Hafnium Oxide
Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry, 2009High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors employed in the deposition of the thin films of these metal oxides, followed by methodology to design precursors with desirable ...
Mrinalini G. Walawalkar +2 more
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Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories
Journal of Applied Physics, 2011Metal–oxide–semiconductor capacitors made of the nanocrystalline ruthenium oxide embedded Zr-doped HfO2 high-k film have been fabricated and investigated for the nonvolatile memory properties. Discrete crystalline ruthenium oxide nanodots were formed within the amorphous high-k film after the 950 °C postdeposition annealing step. The capacitor with the
Chen-Han Lin, Yue Kuo
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Journal of Vacuum Science & Technology B
The cointegration of conventional CMOS with high-k hafnium oxide (HfO2) as the gate dielectric and ferroelectric field effect transistors (FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric has attracted substantial interest owing to several pragmatic applications, viz., embedded nonvolatile memory, neuromorphic computation,
Rushi Jani +2 more
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The cointegration of conventional CMOS with high-k hafnium oxide (HfO2) as the gate dielectric and ferroelectric field effect transistors (FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric has attracted substantial interest owing to several pragmatic applications, viz., embedded nonvolatile memory, neuromorphic computation,
Rushi Jani +2 more
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Synthesis of zirconium and hafnium germanates from mechanically activated oxides
Ceramics International, 2015Abstract The peculiarities of the synthesis of zirconium and hafnium germanates (ZrGeO 4 and HfGeO 4 ) from mechanically activated oxides (GeO 2 , ZrO 2 and HfO 2 ) have been studied. The phase, structural and morphological evolutions of the products obtained by thermal treatment of mechanically activated oxides were studied by a set of analytical ...
V. Prokip +5 more
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