Results 71 to 80 of about 276,626 (313)

Electric Hall Effect and Quantum Electric Hall Effect

Physical Review Letters
Abstract Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a trans verse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to ...
Chaoxi Cui, Run-Wu Zhang, Yuhui Qiu, Yilin Han, Zhi-Ming Yu, Yugui Yao   +5 more
openaire   +3 more sources

Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

APL Materials, 2018
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ∼3.9 × 1014 cm−2 carriers into the EuTiO3.
Kaveh Ahadi, Honggyu Kim, Susanne Stemmer   +2 more
doaj   +1 more source

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge

Advanced Functional Materials, EarlyView.
Fe3Ge, a Kagome‐lattice magnet, exhibits remarkable anomalous Hall and Nernst effects, with transverse thermoelectric conductivity surpassing or comaprable to some well‐known ferromagnets. First‐principles calculations attribute these to Berry curvature from massive Dirac gaps. Additionally, topological Hall and Nernst signals emerge from field‐induced
Chunqiang Xu, Shuvankar Gupta, Hengxin Tan, Hyeonhu Bae, Olajumoke Oluwatobiloba Emmanuel, Mingyu Xu, Yan Wu, Xiaofeng Xu, Pengpeng Zhang, Weiwei Xie, Binghai Yan, Xianglin Ke   +11 more
wiley   +1 more source

Thermodynamic ground and Berry-phase origin of the planar spin Hall effect

Physical Review Research
The thermodynamic ground of the spin transport is elaborated, demonstrating the Onsager's reciprocal relation. The latter is also confirmed by deriving the spin Hall effect and its inverse using the semiclassical theory and the linear response theory ...
Haolin Pan, Zheng Liu, Dazhi Hou, Yang Gao, Qian Niu   +4 more
doaj   +1 more source

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

Micromachines
We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances.
Zuorong Nie, Kai Wang, Xiaoyi Liu, Hong Wang   +3 more
doaj   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

Advanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda, Jorge Cardenas‐Gamboa, Ding Pei, François Bertran, Leila Noohinejad, Snehashish Chatterjee, Changjiang Yi, Iñigo Robredo, Horst Borrmann, Maia G. Vergniory, Chandra Shekhar, Claudia Felser   +11 more
wiley   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

Advanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed, Arnab Bhattacharya, Prashant Singh, Ajay Kumar, Tukai Singha, Anis Biswas, Yaroslav Mudryk, I. Das   +7 more
wiley   +1 more source

Robust quantum spin Hall state and quantum anomalous Hall state in graphenelike BC3 with adatoms

New Journal of Physics, 2018
Two-dimensional (2D) topological insulators (TIs) and Chern insulators (CIs) promise quantum spin Hall (QSH) and quantum anomalous Hall (QAH) states without dissipation.
Yinchang Zhao, Xi Chen, Zhenhong Dai, Chao Zhang, Chao Lian, Shuming Zeng, Sheng Meng, Jun Ni   +7 more
doaj   +1 more source

OBTAINING AND PROPERTIES OF AgInS2 FILMS

Юг России: экология, развитие, 2016
Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental
M. A. Abdullaev, D. A. Alkhasova
doaj   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source