Results 81 to 90 of about 2,893,264 (286)
Scientific Reports, 2017 We report experimental observation of large anomalous Hall effect exhibited in non-collinear triangular antiferromagnet D019-type Mn3Ga with coplanar spin structure at temperatures higher than 100 K. The value of anomalous Hall resistivity increases with
Z. H. Liu +9 more
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OBTAINING AND PROPERTIES OF AgInS2 FILMS
Юг России: экология, развитие, 2016 Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental
M. A. Abdullaev, D. A. Alkhasova
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Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
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Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis
East European Journal of PhysicsIn this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation ...
Fakhriddin T. Yusupov +4 more
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Advanced Functional Materials, EarlyView.From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Low‐Symmetry Weyl Semimetals: A Path to Ideal Topological States
Advanced Functional Materials, EarlyView.This study presents a theoretical framework for realizing ideal Weyl semimetals, where Weyl nodes are well‐isolated at the Fermi level. The approach is exemplified in the low‐symmetry material Cu2SnSe3, which exhibits tunable topological phases, current‐induced orbital magnetization, and a strong circular photogalvanic effect, making it a promising ...
Darius‐Alexandru Deaconu +3 more
wiley +1 more source
Development of a Software Tool for Hall Parameter Evaluation in Semiconductor Structures
Engineering ProceedingsThe Hall effect is widely used in magnetic field sensors and contactless measurement systems. Accurate modeling of Hall-effect elements is essential for optimizing performance, especially in high-sensitivity applications under controlled conditions like ...
Gergana Mironova, Goran Goranov
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Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Advanced Functional Materials, EarlyView.Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko +5 more
wiley +1 more source