Results 91 to 100 of about 497,014 (306)
Advanced Materials Interfaces, EarlyView.A near‐infrared photosensitizer that facilitates efficient solid‐state photon upconversion by recycling triplets formed within a fullerene‐based donor–acceptor bulk‐heterojunction system is demonstrated. Spectroscopic investigations reveal that the energy of photogenerated charge transfer states of triplet character (3CT) is subsequently transferred to
Maciej Klein +4 more
wiley +1 more source
A theoretical study of heterojunction and graded band gap type solar cells [PDF]
A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials.
Hauser, J. R., Sutherland, J. E.
core +4 more sources
Kuwait Journal of ScienceThis study investigates the synthesis and optimization of zinc oxide (ZnO) thin films through the cost-effective spray pyrolysis technique, utilizing varying molar concentrations of zinc acetate precursor.
Oluyemi F.O., Ogunmola E.D., Ajayi A.A.
doaj +1 more source
Diode pumped Nd:YAG laser development [PDF]
A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source.
Herzog, D. G., Reno, C. W.
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Defect Properties and Band Energetics of Atomic Layer Deposited MoOX on Crystalline Si
Advanced Materials Interfaces, EarlyView.Atomic layer deposited MoOx thin films grown using oxygen plasma and ozone co‐reactants exhibit tunable defect densities and band energetics. Optical and X#x02010;ray photoelectron spectroscopies reveal oxygen#x02010;vacancy#x02010;induced defect and polaron states and their impact on band alignment at the c#x02010;Si/MoOx interface, providing insight ...
Namitha Dsouza +3 more
wiley +1 more source
, 2005 We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs
Chiba +10 more
core +1 more source
IEEE Access, 2019 A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn-on of the parasitic body diode and reduce the depletion region ...
Junjie An, Shengdong Hu
semanticscholar +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors
Sensors, 2016 Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors.
Michael A. Marrs, Gregory B. Raupp
doaj +1 more source
Detection of spin voltaic effect in a p-n heterojunction
, 2006 Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-AlGaAs/p-InGaAs/p-GaAs heterostructure are reported. It is found that, under the appropriate forward bias condition, spin voltaic effect (SVE) can survive
Hayafuji, J., Kondo, T., Munekata, H.
core +1 more source