Results 41 to 50 of about 497,014 (306)
Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure
Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/
Ah-Jin Cho +3 more
doaj +1 more source
Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes
Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
Arata Yasuda +2 more
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Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells
Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct ...
Yannick Baines +7 more
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Field‐effect transistors (FETs) are the main building block of microelectronic devices. For most of the FETs, the conduction channel relies on either n‐type or p‐type semiconductor materials.
Liwei Liu +6 more
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Exciton-related electroluminescence from monolayer MoS2
Excitons in MoS2 dominate the absorption and emission properties of the two-dimensional system. Here, we study the microscopic origin of the electroluminescence from monolayer MoS2 fabricated on a heavily p-type doped silicon substrate.
Hanyu Zhu +7 more
core +1 more source
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate.
Nazek El-Atab +6 more
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Manufacturing Zener diode using ZnO-CuO-ZnO/Si structures deposited laser induced plasma technique
In this paper Zener diode was manufactured using ZnO-CuO-ZnO/Si heterojunction structure that used laser induced plasma technique to prepare the nanofilms.
Safa kamal mustafa
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HKUST‐1/TiO2 composite materials show a very high photocatalytic hydrogen evolution rate which increases as a function of the irradiation time until reaching a plateau and even surpasses the performance of the 1%Pt/TiO2 material after three photocatalytic cycles.
Alisha Khan +9 more
wiley +1 more source
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source

