Results 71 to 80 of about 497,014 (306)

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron

Scientific Reports, 2017
Graphene nanoribbon is a popular material in spintronics owing to its unique electronic properties. Here, we propose a novel spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of a pure single ...
Hai Huang, Guoying Gao, Huahua Fu, Anmin Zheng, Fei Zou, Guangqian Ding, Kailun Yao   +6 more
doaj   +1 more source

Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

npj 2D Materials and Applications, 2022
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction.
Dorian Beret, Ioannis Paradisanos, Hassan Lamsaadi, Ziyang Gan, Emad Najafidehaghani, Antony George, Tibor Lehnert, Johannes Biskupek, Ute Kaiser, Shivangi Shree, Ana Estrada-Real, Delphine Lagarde, Xavier Marie, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Sébastien Weber, Vincent Paillard, Laurent Lombez, Jean-Marie Poumirol, Andrey Turchanin, Bernhard Urbaszek   +21 more
doaj   +1 more source

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

, 2015
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices.
Amirthapandian, S., Bera, S., Bhattacharya, Anirban, Dhara, Sandip, Pandian, Ramanathaswamy, Patsha, Avinash   +5 more
core   +2 more sources

Non‐Destructive Laser Nanopatterning of Superconducting Heterostructures in Topological Sn Thin Films

Advanced Materials, EarlyView.
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh, Takahiro Saeki, Keita Ishihara, Daiki Nishigaki, Hideki Maki, Masaaki Tanaka   +5 more
wiley   +1 more source

Electrical And Optoelectronic Properties Of p - PbSe / n - Si Heterojunction [PDF]

Engineering and Technology Journal, 2005
Electrical and optoelectronic properties of p - PbSe / n - Si heterojunction detector have been investigated . The electrical properties under dark condition show a rectifying behaviour with low rectification factor , and exhibits soft breakdown reverse ...
Uday Nayef
doaj   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Ionic liquid gel gate tunable p-Si/MoS2 heterojunction p-n diode

AIP Advances, 2020
Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically ...
Kelotchi S. Figueroa, Nicholas J. Pinto, Chengyu Wen, A. T. Charlie Johnson, Meng-Qiang Zhao   +4 more
doaj   +1 more source