Results 21 to 30 of about 13,032 (198)
Medium wavelength infrared HgCdTe discrete photodetectors
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2017 The authors have developed the topology and technological fabrication route for discrete photodiodes (Θ = 0,5—1,5 mm) for the mid wavelength infrared (MWIR) range, based on the mercury-cadmium-telluride (MCT) epitaxial layers.
Z. F. Tsybrii +11 more
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HgCdTe e-avalanche photodiode detector arrays
AIP Advances, 2015 Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 ...
Anand Singh, A. K. Shukla, Ravinder Pal
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Bibechana, 2020 The Q1D system formed by magnetically confined system is attracting attention of researchers in device application because it is capable of over-looking the various techniques of fabrication difficulties and defects created by such fabrication ...
S Shrestha, C K Sarkar
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Proceedings, 2019 The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion ...
Changzhi Shi, Chun Lin, Yanfeng Wei
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Applied Surface Science Advances, 2020 This paper reports development and performance evaluation of room temperature operated Mercury Cadmium Telluride (HgCdTe) colloidal quantum dot (CQD) coated Si Readout Integrated Circuit (ROIC) based Infrared (IR) Focal Plane Array (FPA).
Abhijit Chatterjee +3 more
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nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier [PDF]
Optical and Quantum Electronics, 2016 Several strategies have been implemented to improve the performance of infrared single pixel detectors at higher operating temperature condition. The most efficient and effective in HgCdTe technology are: non-equilibrium architectures and currently an idea of the barrier detector to include unipolar and complementary structures.
Benyahia, D. +8 more
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Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films
Materials Research Express, 2023 The nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant ...
Dapeng Jin +4 more
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Nanomaterials, 2021 HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions.
Vladimir V. Rumyantsev +18 more
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EPJ Web of Conferences, 2017 Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and
Pociask-Bialy Malgorzata +4 more
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Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System
Metrology and Measurement Systems, 2014 The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature ...
Ciura Łukasz +4 more
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