Results 1 to 10 of about 2,283,291 (202)

High Mobility Graphene on EVA/PET [PDF]

open access: yesNanomaterials, 2022
Transparent conductive film on a plastic substrate is a critical component in low cost, flexible and lightweight optoelectronics. CVD graphene transferred from copper- to ethylene vinyl acetate (EVA)/polyethylene terephthalate (PET) foil by hot press ...
Munis Khan   +3 more
doaj   +3 more sources

High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer [PDF]

open access: yesNanomaterials
With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type ...
Seung-Min Lee   +7 more
doaj   +2 more sources

High Mobility Group Proteins in Sepsis

open access: yesFrontiers in Immunology, 2022
Sepsis, a systemic inflammatory response disease, is the most severe complication of infection and a deadly disease. High mobility group proteins (HMGs) are non-histone nuclear proteins binding nucleosomes and regulate chromosome architecture and gene ...
Guibin Liang, Zhihui He
doaj   +3 more sources

Critical Review of Intelligent Battery Systems: Challenges, Implementation, and Potential for Electric Vehicles

open access: yesEnergies, 2021
This review provides an overview of new strategies to address the current challenges of automotive battery systems: Intelligent Battery Systems. They have the potential to make battery systems more performant and future-proof for coming generations of ...
Lidiya Komsiyska   +16 more
doaj   +1 more source

A Generalized Two-Dimensional FFT Precoded Filter Bank Scheme With Low Complexity Equalizers in Time-Frequency Domain

open access: yesIEEE Access, 2023
Recently, the two-dimensional (2D) fast Fourier transform (2D-FFT) filter bank (FB) technique was proposed as an alternative to new wireless communication technologies covering several application scenarios.
Rogerio Pereira Junior   +3 more
doaj   +1 more source

Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates

open access: yesAdvanced Science, 2021
Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates.
Moon Hyo Kang   +3 more
doaj   +1 more source

High electron mobility InN [PDF]

open access: yesApplied Physics Letters, 2007
Irradiation of InN films with 2MeV He+ ions followed by thermal annealing below 500°C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects.
Jones, R. E.   +9 more
openaire   +4 more sources

Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio

open access: yesIEEE Journal of the Electron Devices Society, 2020
We successfully fabricate the Si0.8Ge0.2 channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10×) on silicon-on-insulator (SOI) substrate by simple two-step dry etching.
Chong-Jhe Sun   +7 more
doaj   +1 more source

A novel two-dimensional transition metal dichalcogenide as water splitting photocatalyst with excellent performances

open access: yesFrontiers in Chemistry, 2022
With the rising demand for renewable energy, photocatalysts are considered the most promising solution to harness solar energy, and the search for photocatalysts with excellent performances remains an urgent task. Here, based on density functional theory
Fang Wang   +9 more
doaj   +1 more source

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

open access: yesAdvanced Electronic Materials, 2023
High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.
Min Guo   +11 more
doaj   +1 more source

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