Results 11 to 20 of about 2,283,390 (301)

Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors

Journal of Information Display, 2023
Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications.
Muhammad Naqi, Seong Cheol Jang, Yongin Cho, Ji Min Park, Joo On Oh, Hyun Yeol Rho, Hyun-Suk Kim, Sunkook Kim   +7 more
doaj   +1 more source

Spectral efficiency of adaptive OFDM systems over high mobility Nakagami-m fading channels

Systems Science & Control Engineering, 2020
In this paper, we investigate the impact of rate and power adaptation (RPA) and rate adaptation (RA) using square M-ary quadrature amplitude modulation (MQAM) on the average spectral efficiency (ASE) of orthogonal frequency division multiplexing (OFDM ...
Xiuyan Zhang, Qiming Sun, Yan Gao
doaj   +1 more source

Gating of high-mobility InAs metamorphic heterostructures [PDF]

, 2014
We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their ...
McFadden, A. P., Palmstrøm, C. J., Shabani, J., Shojaei, B.   +3 more
core   +1 more source

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In₂O₃ (In₂O₃:H)

Nanomaterials, 2022
Hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μFE) exceeding 100 cm2 V−1 s−1 are promising candidates for future ...
Yusaku Magari, Wenchang Yeh, Toshiaki Ina, Mamoru Furuta   +3 more
doaj   +1 more source

Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing

Crystals, 2022
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/dec ...
Muhammad Idzdihar Idris, Alton Horsfall
doaj   +1 more source

Realizing Multi-Gbps Vehicular Communication: Design, Implementation, and Validation

IEEE Access, 2019
This paper proposes a vehicular communication system that can achieve multi-Gbps data rate transmission for train and car applications. Employing a millimeter-wave frequency band around 25 GHz, the proposed system provides mobile backhaul connectivity ...
Gosan Noh, Junhyeong Kim, Heesang Chung, Ilgyu Kim   +3 more
doaj   +1 more source

High Mobility Reactive Sputtered Cu_xO Thin Film for Highly Efficient and Stable Perovskite Solar Cells

Crystals, 2021
Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high ...
Mohammad Aminul Islam, Yasmin Abdu Wahab, Mayeen Uddin Khandaker, Abdullah Alsubaie, Abdulraheem S. A. Almalki, David A. Bradley, Nowshad Amin   +6 more
doaj   +1 more source

Profuse Channel Estimation and Signal Detection Techniques for Orthogonal Time Frequency Space in 6G Epoch: A Survey

IEEE Access, 2023
Orthogonal time frequency space (OTFS) modulation is a booming multicarrier modulation technique and a promising candidate for achieving quality of services in high mobility scenarios of 5G new radio (NR) and beyond wireless communication systems.
Sundaresan Sabapathy, Jefrin Sharmitha Prabhu, Surendar Maruthu, Dushantha Nalin K. Jayakody   +3 more
doaj   +1 more source

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

, 2020
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation.
Imura, Masataka, Inoue, Jun-ichi, Kageura, Taisuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Sasama, Yosuke, Takahide, Yamaguchi, Taniguchi, Takashi, Uchihashi, Takashi, Watanabe, Kenji   +9 more
core   +1 more source

High‐Mobility Fungus‐Triggered Biodegradable Ultraflexible Organic Transistors

Advanced Science, 2022
Biodegradable organic field‐effect transistors (OFETs) have drawn tremendous attention for potential applications such as green electronic skins, degradable flexible displays, and novel implantable devices.
Yahan Yang, Hongying Sun, Xiaoli Zhao, Da Xian, Xu Han, Bin Wang, Shuya Wang, Mingxin Zhang, Cong Zhang, Xiaolin Ye, Yanping Ni, Yanhong Tong, Qingxin Tang, Yichun Liu   +13 more
doaj   +1 more source