Results 171 to 180 of about 8,906 (184)

40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process

2006 European Microwave Integrated Circuits Conference, 2006
We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O2 plasma and BOE solution etching. Because O2 plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without ...
Sung-won Kim, Gyung-seon Seol, Jin-churl Her, Kyung-chul Jang, Kwang-seok Seo   +4 more
openaire   +1 more source

Resistance Switching Structures Based on Hydrogen Silsesquioxane (HSQ) Thin Films

ECS Meeting Abstracts, 2016
In recent years, resistance switching (ReRAM) devices have attracted a lot of attention due to their properties in low programmable energy and fast switching speed which could lead to potential applications in non-volatile memory. Hydrogen silsesquioxane (HSQ) is commonly used in electronic industry as a flowable dielectric material, and here we ...
Wing Hung Ng, Adnan Mehonic, Luca Montesi, Mark Buckwell, Anthony Joseph Kenyon   +4 more
openaire   +1 more source

Study of negative electron beam nanoresist HSQ on GaAs substrate

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016
The aim of this paper is to characterize Hydrogen Silsesquioxane (HSQ) inorganic negative electron resist on GaAs substrate at 40 keV electron energy. The influence of process parameters on resist profiles was investigated with the aim of obtaining vertical sidewalls.
R. Andok, A. Bencurova, I. Kostic, A. Ritomsky, J. Skriniarova, K. Vutova   +5 more
openaire   +1 more source

Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)

SPIE Proceedings, 1998
Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si-H bonding is maintained at a high level. However, the quality of HSQ films are degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the
Ting-Chang Chang, P. T. Liu, M. F. Chou, Ming-Shih Tsai, Simon M. Sze, Chun-Yen Chang, F. Y. Shih, H. D. Huang   +7 more
openaire   +1 more source

Helium ion beam lithography of thick HSQ resists

2012
In this work we study the resist thickness dependence of SHIBL in negative tone (HSQ) resist. The ion beam used is a 30 keV focused He+ beam of an OrionPlus helium ion microscope. The structures made are dots, single and multiple lines, and squares. The resist thickness is varied between 4 and 162 nm. The substrate is silicon.
Alkemade, P.F.A., Langen-Suurling, A.K. van, Drift, E. van der, Veldhoven, E. van, Maas, D.J.   +4 more
openaire   +1 more source

Headache Screening Questionnaire (HSQ)

FysioPraxis, 2018
van der Meer, Hedwig, Visscher, Corine, Engelbert, Raoul, Nijhuis-van der Sanden, Maria, Speksnijder, Caroline   +4 more
  +7 more sources

HSQ – Health Status Questionnaire

2023
openaire   +1 more source

Nanoimprint lithography using hydrogen silsequioxane(HSQ) mold

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004., 2004
M. Kawamori, K. Nakamatsu, K. Tone, T. Katase, H. Namatsu, S. Matsui   +5 more
openaire   +1 more source

HSQ

2014
openaire   +2 more sources

Влияние температуры проявления на контраст электронного резиста HSQ

Микроэлектроника, 2020
openaire   +1 more source