Results 191 to 200 of about 3,083 (223)

The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging

2023 IEEE International Reliability Physics Symposium (IRPS), 2023
Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi   +3 more
openaire   +1 more source

Boosting peroxymonosulfate activation by a novel bifunctional core-shell nanoreactor MnFe2O4@HZO for nitrilotris-methylenephosphonic acid removal

Applied Catalysis B: Environmental, 2023
Biming Liu, Shengqiang Hei, Xianzheng Zhu   +2 more
exaly  

Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor

ACS Applied Electronic Materials, 2022
Shih-Hao Tsai, Umesh Chand, Sonu Hooda   +2 more
exaly  

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng   +14 more
openaire   +1 more source

Sputtered HfO2/ZrO2 Induced Interfacial Ferroelectric HZO Layer for Negative Capacitance Applications

Lecture Notes in Electrical Engineering, 2023
Ankita Sengupta, Subhrajit Sikdar, Sanatan Chattopadhyay   +2 more
exaly  

Herpes Zoster Ophthalmicus (HZO)

2009
Huck A. Holz, Ladan Espandar, Majid Moshirfar   +2 more
openaire   +1 more source

Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

IEEE Transactions on Electron Devices, 2023
Eunseon Yu, Mengwei Si, Peide D Ye
exaly  

Study on the retention characteristics of HZO FeFETs

Fourth International Conference on Electronics Technology and Artificial Intelligence (ETAI 2025)
WenXuan Zheng, Hui Zhu, Chao Xu, Congshan Hu, Jingyi Hu, Miaomiao Xu   +5 more
openaire   +1 more source

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

ACS Applied Electronic Materials, 2019
Jordan Bouaziz, Pedro Rojo Romeo, B Vilquin   +2 more
exaly  

Stress-Memorized HZO-Based Ferroelectric Field-Effect Memtransistor

Proceedings of the Neuromorphic Materials, Devices, Circuits and Systems, 2023
Shih-Hao Tsai, Zihang Fang, Chun-Kuei Chen, Sonu Hooda, ‪Evgeny Zamburg, Voon-Yew Thean   +5 more
openaire   +1 more source