Results 41 to 50 of about 85,220 (297)
Nanomaterials, 2021 Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical ...
Igor A. Khramtsov, Dmitry Yu. Fedyanin
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Laterally stacked Schottky diodes for infrared sensor applications [PDF]
, 1991 Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating.
Lin, True-Lon
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A study of temperature-related non-linearity at the metal-silicon interface [PDF]
, 2012 In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity.
A. Pérez-Tomás +11 more
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Handbook of Establishing and Maintaining Oxygen‐Free Atmospheres
Advanced Engineering Materials, EarlyView.This study presents a practical framework for creating oxygen‐free atmospheres at ambient pressure using silane‐doped inert gases. The results show that ultra‐low oxygen levels and strongly reduced water content can be achieved through controlled silane dosing, drying systems, and sensor monitoring.
Sascha Jan Zimmermann +3 more
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Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission
Advanced Science, 2021 The success of metal halide perovskites in photovoltaic and light‐emitting diodes (LEDs) motivates their application as a solid‐state thin‐film laser. Various perovskites have shown optically pumped stimulated emission of lasing and amplified spontaneous
Changsoon Cho +8 more
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A New Transformerless Ultra High Gain DC–DC Converter for DC Microgrid Application
IEEE Access, 2021 High gain dc-dc converters are used in several applications which include solar photovoltaic system, switch-mode power supplies and fuel cells. In this paper, an ultra-high gain dc-dc boost converter is proposed and analyzed in detail.
Shahrukh Khan +9 more
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Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) [PDF]
, 2002 Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x 0 ...
Airey, R.J. +5 more
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Application of Raman and Photoluminescence Spectroscopy to MgO‐C Refractories
Advanced Engineering Materials, EarlyView.Visible to near infrared luminescence of MgO is studied on MgO‐C bricks and nominally pure MgO powder, with focus on two similar sharp high‐intensity signals, at 699 and 871 nm, each surrounded by symmetrical sidebands. The nature of these sidebands is investigated by temperature‐dependent spectroscopic measurements, confirming phonon involvement by ...
Julia Richter +5 more
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2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
IEEE Journal of the Electron Devices Society, 2018 This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials.
Xinke Liu +6 more
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Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules
Advanced Functional Materials, EarlyView.A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang +7 more
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