Results 41 to 50 of about 36,373 (209)

Reducing switching losses through MOSFET-IGBT combination [PDF]

, 2008
This paper introduces a configuration aimed at switching losses reduction trough a power leg constructed by combining a MOSFET and an IGBT. The combined use of these different switches leads to the turn-on losses reduction trough the use of the faster ...
Marinov, Angel, Valchev, Vencislav, Van den Bossche, Alex   +2 more
core  

An Icepak-PSpice Co-Simulation Method to Study the Impact of Bond Wires Fatigue on the Current and Temperature Distribution of IGBT Modules under Short-Circuit [PDF]

, 2014
Bond wires fatigue is one of the dominant failure mechanisms of IGBT modules. Prior-art research mainly focuses on its impact on the end-of-life failure, while its effect on the short-circuit capability of IGBT modules is still an open issue.
Blaabjerg, Frede, Iannuzzo, Francesco, Wang, Huai, Wu, Rui   +3 more
core   +1 more source

Automated quality assurance of HDR brachytherapy: Evaluation of Dwell‐position accuracy and Dwell‐time linearity via image processing of radiochromic films

Precision Radiation Oncology, EarlyView.
This study develops a method combining radiochromic film and image processing to assess HDR brachytherapy source accuracy and linearity, achieving high precision and efficiency . Abstract Purpose To develop and validate a fully automated quality assurance method for high‐dose rate (HDR) brachytherapy, enabling the precise evaluation of source dwell ...
Qingqing Yuan, Suyan Bi, En Lou, YaJun Jia, Zhitao Dai   +4 more
wiley   +1 more source

Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit

机车电传动, 2020
Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss.
Wei TIAN, Sunmeng XIE, Yanping CHEN, Rong ZHANG, Wu ZHU, Jie LIU, Yifan TAN   +6 more
doaj  

Lifetime Evaluation of Traction Converter IGBT Based on Operating Conditions and Component Aging

Kongzhi Yu Xinxi Jishu, 2022
IGBT's lifetime is greatly influenced by the operation conditions of train and the current aging degree of IGBT. However, the influences of train operation conditions and current life of an IGBT on the life assessment are normally not considered.
LI Dong, HE Haopeng, PENG Yangbin, XIN Kaiyue, YAO Xianping, GE Xinlai   +5 more
doaj   +1 more source

Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects

High Voltage, EarlyView.
ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi, Hassan Moradi, Kumars Rouzbehi, Vijay K. Sood   +3 more
wiley   +1 more source

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Energies, 2020
A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang, Baikui Li, Zheyang Zheng, Xi Tang, Jin Wei   +4 more
doaj   +1 more source

Probabilistic approaches and reliability design of power modules [PDF]

International Journal for Simulation and Multidisciplinary Design Optimization, 2008
The weak point for the standard power IGBT modules in terms of reliability is thermal fatigue in solder joints due to the thermal stress induced by constitutive materials with different coefficients of thermal expansion (CTE). So far, many researches are
Micol A., Martin C., Dalverny O., Mermet-Guyennet M., Karama M.   +4 more
doaj   +1 more source

Parametric Modeling and Analysis of High Power IGBT Device

Kongzhi Yu Xinxi Jishu, 2023
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and di/dt, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses and ...
LIU Fei, MAO Kaixiang
doaj   +1 more source

The Diverse Behaviours of Discharged Degradation at Varied Interfaces of Silicone Gel/Ceramic Substrates Under High‐Frequency Square Wave Voltage

High Voltage, EarlyView.
ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang, Xinlu Li, Hongjian Liu, Ruomeng An, Lingqi Guo, Jiaqi Liu, Shihang Wang, Shengtao Li   +7 more
wiley   +1 more source