Results 201 to 210 of about 12,622 (259)

Design and implementation of an innovative single-phase direct AC-AC bipolar voltage buck converter with enhanced control topology. [PDF]

Sci Rep
Ashraf N, Abbas G, Mushtaq Z, Rehman AU, Ouahada K, Hamam H.   +5 more
europepmc   +1 more source

Characteristics of Carbon Nanotube Cold Cathode Triode Electron Gun Driven by MOSFET Working at Subthreshold Region. [PDF]

Nanomaterials (Basel)
Guo Y, Li B, Zhang Y, Deng S, Chen J.
europepmc   +1 more source

The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage

Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang   +2 more
openalex   +1 more source

A dual doubly-fed generator system supplied by a five-phase voltage inverter. [PDF]

Sci Rep
Blecharz K, Kondratenko D.
europepmc   +1 more source

Utility-Scale Silicon Carbide Power Transistors: 15 kV SiC IGBT Power Modules for Grid Scale Power Conversion

, 2010
None
openalex   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Optimum switching in IGBT transistor

Proceedings of MELECON '94. Mediterranean Electrotechnical Conference, 2002
The generalised industrial application of high power transistor based converters requires the implementation of transistor drive circuits capable of working without additional floating power supplies and satisfying a set of requirements imposed by the industrial end users.
A.R. Quintas, A. Carvalho, A. Araujo, A. Martins   +3 more
openaire   +1 more source

Two novel modeling methodologies for IGBT transistor

IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2003
To overcome the limitations of the conventional Matlab IGBT model, two model libraries for the power device (IGBT) aimed for the simulation of the power circuit tools have been proposed. To that end, we adapt the Stateflow to create the first model that consists of both control and operative parts.
F. Charfi, M.B. Messaoud, B. Francois, K. Al-Haddad, F. Sellami   +4 more
openaire   +1 more source

Research of IGBT-transistor in pulse switch

2016 2nd International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM), 2016
This paper describes research of influence of gate current and transistor commutation voltage on the switch operation efficiency in IGBT-transistor switch. At research and development of the high-effective energy-saving solutions, we often meet the task of modeling processes related to the electric pulse switch converters.
A. S. Martyanov, D. V. Korobatov, E. V. Solomin   +2 more
openaire   +1 more source