Results 211 to 220 of about 12,622 (259)

Short-circuit capability of IGBT (COMFET) transistors

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting, 2003
The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability.
T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T.M. Undeland   +4 more
openaire   +1 more source

Half Bridge Driver for MOSFET and IGBT Transistors

2019 IEEE International Conference on Modern Electrical and Energy Systems (MEES), 2019
the paper deals with the problem of designing a suitable driver for MOSFET and IGBT transistors. The circuit should provide not only sufficient excitation but also galvanic separation of the power and control circuit and should be able to set the optional length of the safety gap when switching the transistors connected in one converter branch.
Dobroslav Kovac, Andrii Gladyr
openaire   +1 more source

A new hybrid SOI LDMOS-IGBT power transistor

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.
J. Zeng, P.A. Mawby, M.S. Towers, K. Board   +3 more
openaire   +1 more source

Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
openaire   +1 more source

An IGBT and MOSFET gated SiC bipolar junction transistor

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2003
A high voltage 4H-SiC bipolar junction transistor (BJT) has been developed with 16 A, 600 V rating. This paper presents a new base drive structure for the SiC BJT for inverter application. The driver consists of one IGBT and one MOSFET to help turn-on and turn-off of the SiC BJT transistor in a Darlington like configuration.
null Huijie Yu, J. Lai, X. Li, Y. Luo, L. Fursin, J.H. Zhao, P. Alexandrov, B. Wright, M. Weiner   +8 more
openaire   +1 more source

A transient model for insulated gate bipolar transistors (IGBTs)

International Journal of Electronics, 2008
In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu, Myungsoo Lee, Mohsen A. Hajji, Hyungkeun Ahn, Deukyoung Han, Mahmoud El Nokali   +5 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)

2021 IEEE Region 10 Symposium (TENSYMP), 2021
In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee, Jonghyeon Ha, Jungsik Kim   +2 more
openaire   +1 more source

The current gain of bipolar transistor in the IGBT measurement

2000 TENCON Proceedings. Intelligent Systems and Technologies for the New Millennium (Cat. No.00CH37119), 2002
The common emitter current gain (/spl beta//sub 0/) of the bipolar transistor in the IGBT (insulated gate bipolar transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the early voltage (V/sub A/) of the device.
J. Parnklang, S. Niemcharoen, S. Yardsamer   +2 more
openaire   +1 more source

Thermal reliability of power insulated gate bipolar transistor (IGBT) modules

Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002
Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu, null Guo Gao, null Limin Dong, null Zhengyuan Wang, M. Held, P. Jacob, P. Scacco   +6 more
openaire   +1 more source