Results 241 to 250 of about 12,756,485 (311)

Quantum noise spectroscopy of nanoscale charge defects in silicon carbide at room temperature. [PDF]

Sci Adv
Liu J, Teng Y, Chen Y, Wang Y, Luan S, Luo C, Yin J, Li H, You L, Li Q, Yin C, Wang Y, Zhang Q, Shi F.   +13 more
europepmc   +1 more source

Diketopyrrolopyrrole‐Based Cation as a Semiconducting Spacer in Layered Perovskite

Advanced Materials, EarlyView.
Diketopyrrolopyrrole cation incorporated layered perovskites exhibiting extended absorption profiles and enhanced charge carrier mobility with type‐II energy alignment. The improved photoconversion efficiency demonstrates the critical role of incorporating organic semiconductors in optimizing layered perovskite performance.
Waygen Thor, Colin Jeanguenat, Louise De Cian, Demetra Tsokkou, Parnian Ferdowsi, Nicolas J. Diercks, Natalie Banerji, Jun‐Ho Yum, Kevin Sivula   +8 more
wiley   +1 more source

Reversible Thickness Engineering in Amorphous In₂O₃ Transistors. [PDF]

Nano Lett
Pan YY, Hsu CH, Tseng R, Wang ST, Chang YC, Chen SC, Kimura T, Lan YW, Lien DH.   +8 more
europepmc   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

Basic Notions and Innovations in Electrochemical Advanced Oxidation Processes for Water Treatment. [PDF]

Small Sci
Tanos F, Gomri C, Trellu C, Oturan MA, Li S, Zhou M, Jayeola KD, Arotiba OA, Dos Santos EV, Martínez-Huitle CA, Bechelany M, Cretin M.   +11 more
europepmc   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Broadly applicable hydrophilic additive enhances electrochemical transistor function. [PDF]

Proc Natl Acad Sci U S A
Gao L, Cho Y, Wang R, Yao Y, Zhang D, Wang Y, Cheng Y, Wang Y, Ma Q, Duplessis I, Chung S, Wilson E, Cho K, Wang B, Li L, Rivnay J, Wang H, Yu J, Marks TJ, Facchetti A.   +19 more
europepmc   +1 more source

PtSe₂-Based Heterostructures on GaP Nanowires: Interface Formation and Photoelectrical Properties. [PDF]

Nanomaterials (Basel)
Laurenčíková A, Sojková M, Lettrichová I, Hasenöhrl S, Eliáš P, Pudiš D, Kováč J, Hulman M, Kováč J, Rosová A, Švec P, Píš I, Novák J.   +12 more
europepmc   +1 more source

Comparison of Quantum Transition Characteristics of Group II-VI (ZnO), Group III-V (GaN) Compound Semiconductors, and Intrinsic (Si) Semiconductors in Response to Externally Applied Energy. [PDF]

Materials (Basel)
Park H, Lee SH.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source