Results 261 to 270 of about 12,756,485 (311)
Some of the next articles are maybe not open access.
Instabilities of Current in III–V Semiconductors
IBM Journal of Research and Development, 1964A description is given of a newly discovered phenomenon which is observed when an electric field of a few thousand V cm-1 is applied to a homogeneous sample of n-type GaAs or InP. Above a well-defined threshold field, a time-dependent decrease in current is observed, which is largely independent of external circuite conditions.
openaire +2 more sources
Microwave III-V semiconductors for telecommunications and prospective of the III-V industry
Proceedings International Symposium on Quality Electronic Design, 2003The microwave III-V semiconductor IC technology (primarily GaAs) has emerged as a powerful enabling technology for wireless and optical communications in the past 5 years. It has been dominating, or making substantial penetration into, the market for handset power amplifiers and switches, advanced wireless LAN RF front-ends and various other key RF ...
openaire +2 more sources
Photoetching of III/V semiconductors
Electrochimica Acta, 1989The dependence of the capacitance—potential plots and of the photocurrent—potential plots of n-GaAs(100) and p-GaAs(100) interfaces in sulfuric acid on the hydrogen peroxide concentration was investigated. Simultaneously, in situ Raman spectroscopy was applied.
W.J. Plieth +3 more
openaire +1 more source
III–V Semiconductor Photoelectrodes
2017Abstract In the past decades, great efforts have been made to develop efficient solar-to-fuel conversion devices using III–V semiconductors. In this chapter, a brief history of III–V photoelectrodes for photochemistry and their synthesis methods are firstly reviewed. Then, an important category of solar-energy-conversion devices, photoelectrochemical
Georges Siddiqi, Zhenhua Pan, Shu Hu
openaire +1 more source
Characterization of Iii–V Semiconductors
1989This chapter is from the book III-V Semiconductors Materials Devices Materials Processing: Theory and Practices. The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a
D.C. REYNOLDS, D.C. LOOK
openaire +3 more sources
Epitaxy of III–V semiconductors
Canadian Journal of Physics, 1991This paper is concerned with the control of the epitaxial deposition of III–V materials by means of techniques using metal organic group III compounds and group V hydrides as starting materials: metal-organic vapour-phase epitaxy and metal-organic molecular-beam epitaxy.
P. Balk +4 more
openaire +1 more source
Hydrogen in III–V Semiconductors
MRS Proceedings, 1987ABSTRACTThe reversible introduction of atomic hydrogen into III–V semiconductors reduces the active concentrations of shallow donor and acceptor levels, as well as a variety of deep levels. Dissociation of the hydrogen-containing complexes by thermal annealing can restore the original active concentrations, and aid in the characterization of the ...
openaire +1 more source
Doping in III-V Semiconductors
MRS Proceedings, 1994ABSTRACTDoping of III-V semiconductors is an essential part of growth and processing technology for optoelectronic and high speed electronic devices. This review covers several recent developments in III-V doping including (i) the high-concentration regime for p-type dopants in InP and GaAs, (ii) the sensitivity of doping incorporation on the crystal ...
openaire +1 more source
Doping in III-V Semiconductors
1993This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion.
openaire +1 more source