Results 251 to 260 of about 12,756,485 (311)

Effects of Growth Temperature on the Compositions of GaAsSb/AlAsSb Epitaxial Layers Grown on GaAs Substrates. [PDF]

ACS Omega
Laryn T, Kim Y, Chu RJ, Choi WJ, Jung D.
europepmc   +1 more source

Threading dislocation reduction in heteroepitaxial GaSb based superlattices grown on silicon. [PDF]

Sci Rep
Delli E, Bentley M, Mulholland N, Hodgson PD, de la Mata M, Molina SI, Beanland R, Wagener MC, Botha JR, Marshall ARJ, Carrington PJ.   +10 more
europepmc   +1 more source

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Pores in III–V Semiconductors

Advanced Materials, 2003
AbstractThe paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self‐organization. Self‐ organization issues include the formation of single‐crystalline two‐dimensional hexagonal arrays of pores ...
I M Tiginyanu, J Carstensen, M Christophersen   +2 more
exaly   +3 more sources

Oxidation of III–V semiconductors

Corrosion Science, 2007
Abstract This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties.
Graham, M. J., Moisa, S., Sproule, G. I., Wu, X., Landheer, D., SpringThorpe, A. J., Barrios, P., Klebber, S., Schmuki, P.   +8 more
openaire   +2 more sources

Diluted magnetic III-V semiconductors

Physical Review Letters, 1989
A new diluted magnetic III-V semiconductor of ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$As (x\ensuremath{\le}0.18) has been produced by molecular-beam epitaxy. Films grown at 300 \ifmmode^\circ\else\textdegree\fi{}C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters.
H. Munekata, H. Ohno, S. von Molnar, A. Segmuller, L.L. Chang, L. Esaki   +5 more
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Core Levels of III‐V Semiconductors

physica status solidi (b), 1972
AbstractThe absorption and reflection spectra of GaP, GaAs, GaSb, InP, InAs, and InSb in the region from 15 to 40 eV are presented and compared with those obtained from characteristic electron energy losses. From these data, information about the density of conduction states, the matrix elements for transitions from the outermost core levels to the ...
Gudat, W., Koch, E. E., Yu, P. Y., Cardona, M., Penchina, C. M.   +4 more
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Hydrogen chemisorption on III–V semiconductor surfaces

Surface Science Reports, 2003
A review of the experimental data and theoretical results dealing with the fundamental aspects of the hydrogenation of III-V semiconductor surfaces is presented. The collected material covers the production available in the specialised literature in this field over the last 30 years.
NANNARONE, Stefano, M. Pedio
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Wet etching of III–V semiconductors

ChemInform, 2001
Publisher Summary The processing of III–V compound semiconductors for component fabrication involves various steps in which material is removed in a controlled way—that is, etching steps. Both dry and wet etching methods are employed. This chapter focuses on wet etching and discusses the basic principles and experimental methods of semiconductor ...
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Ferromagnetic III–V Semiconductors and Their Heterostructures

ChemInform, 2002
AbstractFor Abstract see ChemInform Abstract in Full Text.
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