Results 101 to 110 of about 97,769 (306)
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Advanced Science, EarlyView.Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
The Book Tree Press – an accidental imprint [PDF]
, 2019 Celebrating the 10th birthday of the imprint The Book Tree Press, Lucy Roscoe reflects back on 10 years of practice. What began as a postgraduate research project, grew into an artist’s imprint, publishing sculptural books which explore how the book form
Roscoe, Lucy; id_orcid
core +2 more sources
Contact angle comparison of two elastomeric impression materials during initial setting. [PDF]
Acta Stomatologica MarisiensisIntroduction: Hydrophilicity of elastomeric impression materials is a key property in producing an accurate impression in prosthodontic treatment. Aim: To study the hydrophilicity (wettability) of two different elastomeric impression materials in vitro ...
Usama Nassar +5 more
doaj +1 more source
Imprint lithography template comprising alignment marks [PDF]
, 2003 A system of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and ...
Sreenivasan, Sidlgata V. +3 more
core +1 more source
Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Advanced Science, EarlyView.HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Advanced Science, EarlyView.A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic +4 more
wiley +1 more source
Comparative study of intraoperative cytology, Frozen section and histopathology of ovarian neoplasms
Journal of Dr. NTR University of Health SciencesObjective: To evaluate the role of intraoperative cytology in the diagnosis of ovarian tumours. Methods: A cross sectional study of 75 cases received from January 2016 to October 2021 was conducted in the Department of Pathology for ovarian neoplasms ...
Anmol Dubey +4 more
doaj +1 more source