Results 171 to 180 of about 109,991 (250)
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Sputtered oxide/indium phosphide junctions and indium phosphide surfaces
Journal of Applied Physics, 1980The reason that sputtered indium-tin oxide (ITO)/InP solar cells junctions with large lattice mismatch have the same efficiency as CdS/InP junctions with good lattice match is shown to be that sputtered ITO/InP junctions actually consist of n+-ITO/n-InP/p-InP buried homojunctions.
Ming‐Jong Tsai +2 more
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Journal of the American Chemical Society, 2020
Increasing the quantum yields of InP quantum dots is important for their applications, particularly for use in consumer displays. While several methods exist to improve quantum yield, the addition of inorganic metal halide salts has proven promising.
Jason J. Calvin +5 more
semanticscholar +1 more source
Increasing the quantum yields of InP quantum dots is important for their applications, particularly for use in consumer displays. While several methods exist to improve quantum yield, the addition of inorganic metal halide salts has proven promising.
Jason J. Calvin +5 more
semanticscholar +1 more source
Electrodeposition of indium phosphide
Journal of Crystal Growth, 1981Abstract The electrodeposition of indium phosphide films has been achieved using a solution of In 2 O 3 in a quaternary NaPO 3 /KPO 3 / NaF/KF eutectic. Stable growth of coherent layers on CdS and [111] and [100] InP requires a current density in the range 1–3 mA cm -2 .
Robert S. Feigelson +2 more
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Synthesis and Spectroscopy of Emissive, Surface-Modified, Copper-Doped Indium Phosphide Nanocrystals
, 2020Aminophosphine precursors were used to synthesize copper-doped indium phosphide nanocrystals (InP NCs) via direct doping in a slow-injection bottom-up method and postsynthetic cation exchange.
M. E. Mundy +4 more
semanticscholar +1 more source
Continuous Nucleation and Size Dependent Growth Kinetics of Indium Phosphide Nanocrystals
Chemistry of Materials, 2020Aminophosphines derived from N,N′-disubstituted ethylenediamines (R–N(H)CH2CH2N(H)–R; R = ortho-tolyl, phenyl, benzyl, iso-propyl, and n-octyl) were used to adjust the kinetics of InP nanocrystal f...
Brandon M. McMurtry +5 more
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Dry Etching of Indium Phosphide [PDF]
MRS Proceedings, 1992 ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices.
Patrick Bond +4 more
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, 2020
Because of their lower toxicity, indium phosphide (InP) quantum dots (QDs) are replacing cadmium selenide QDs in applications that require narrowband luminescence across the visible spectrum.
Odin B. Achorn, D. Franke, M. Bawendi
semanticscholar +1 more source
Because of their lower toxicity, indium phosphide (InP) quantum dots (QDs) are replacing cadmium selenide QDs in applications that require narrowband luminescence across the visible spectrum.
Odin B. Achorn, D. Franke, M. Bawendi
semanticscholar +1 more source
Indium Phosphide Photonic Integrated Circuits
Optical Fiber Communication Conference (OFC) 2020, 2020Photonic integration is essential for high-performance communications and now becomes directly exploitable in sensing, metrology and imaging. InP PICs provide lasers, amplifiers, modulators and detectors in one platform, and a roadmap for higher density integration.
Kevin A. Williams, MK Meint Smit
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The mercury–indium phosphide diode
Physica Status Solidi (a), 1980Electrical characteristics are described for a contact made between mercury and n-type InP. Both capacitance-voltage and current-voltage measurements are made. The contact is found to be unstable, with both types of characteristics showing a steady drift with time, but the curves nevertheless follow ideal Schottky barrier theory closely over a wide ...
B. Tuck, Barrie Hayes-Gill
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Soviet Physics Journal, 1969
A method is given for obtaining p-n junctions by diffusing zinc or cadmium into InP. The current-voltage characteristics of such a p-n junction at room temperature are given.
S. G. Metreveli, R. M. Kundukhov
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A method is given for obtaining p-n junctions by diffusing zinc or cadmium into InP. The current-voltage characteristics of such a p-n junction at room temperature are given.
S. G. Metreveli, R. M. Kundukhov
openaire +2 more sources