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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
Applied Physics Letters, 1980We report the first systematic measurement of the electroreflectance spectra of InuGa1−uPvAs1−v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1.
Ernesto H. Perea +2 more
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Zinc Oxo Clusters Improve the Optoelectronic Properties on Indium Phosphide Quantum Dots
, 2020This study explored the effect of zinc precursors on the optical properties of InP quantum dots (QDs) by controlling the reactivity of zinc carboxylates via a simple thermal treatment.
Kangyong Kim +6 more
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Polarization‐Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials, 2020Although semiconductor nanowire (NW) photodetectors are promising building blocks for nanoscale on‐chip optoelectronic integration applications, poor absorption, and strong light polarization dependence due to their inherent anisotropic geometry remain ...
Mingcheng Luo +11 more
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The Preparation and Properties of Indium Phosphide
Russian Chemical Reviews, 1986The present review examines recent work on the synthesis of polycrystalline specimens of indium phosphide and the growth of single crystals of this compound for the modern electronics industry. The synthesis of polycrystalline indium phosphide by different methods is examined. Particular attention has been paid to work on the preparation of highly pure
V P Talyzin, A Ya Nashel'skii
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Journal of Crystal Growth, 1983
Abstract Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry ...
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Abstract Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry ...
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 2003
High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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Zone melting of indium phosphide
Journal of Electronic Materials, 1975Bulk indium phosphide crystals have been prepared by zone melting with dislocation densities 104 ≤ Nd ≤ 105 cm-2. The residual impurity level in nominally undoped crystals and the dopant distribution in Cd-, Sn- and Ge-doped zone melted ingots, as revealed by spark source mass spectrometric analyses, indicate a strong interaction between segregation at
L. Clark +4 more
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Indium phosphide particle detectors
IEEE Transactions on Nuclear Science, 1989The authors fabricated particle detectors made from InP:Fe, InP:Zn, and InP:Cu and evaluated the performance of these devices. The InP detectors were suggested for gamma-ray detection with varying degrees of success. Gamma-ray pulse-height spectra were acquired and stored for detectors of each type.
F. Olschner +3 more
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The preparation and assessment of indium phosphide
Journal of Crystal Growth, 1983Abstract Polycrystalline ingots of indium phosphide with large grain size have been grown by horizontal directional freezing in an autoclave. The best products have carrier concentrations 15 cm -3 at room temperature, and mobilities ranging from 20,000–40,000 cm 2 V -1 s -1 at 77 K.
J.E. Wardill +5 more
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, 2018
Synthesis of size-tunable indium phosphide (InP) quantum dots (QDs) with narrow size distribution has been long known to be more challenging due to the difficulties in controlling QDs nucleation and growth processes via precursor conversion kinetics ...
P. Ramasamy +3 more
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Synthesis of size-tunable indium phosphide (InP) quantum dots (QDs) with narrow size distribution has been long known to be more challenging due to the difficulties in controlling QDs nucleation and growth processes via precursor conversion kinetics ...
P. Ramasamy +3 more
semanticscholar +1 more source