Results 191 to 200 of about 109,991 (250)
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MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM PHOSPHIDE
Journal of Crystal Growth, 1975Oscillators with efficiencies over 20% at 15 GHz that have small temperature sensitivity, and transferred electron amplifiers that have less than 9 dB noise figures at 15 GHz have been made from epitaxial multilayers of indium phosphide. The techniques involved in growing and characterising these epitaxial layers are presented.
R.C. Clarke, L.L. Taylor
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Indium Phosphide - Into The Future
SPIE Proceedings, 1989Major industry interest is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress.
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Near-Infrared Light Triggered Antimicrobial Indium Phosphide Quantum Dots.
Angewandte Chemie, 2019The emergence of multidrug-resistant (MDR) pathogens represents one of the most urgent global public health crises. Light-activated quantum dot (QD) nanotherapeutics can revitalize the drying pipeline of antibiotics as alternative antimicrobials-with ...
Max Levy +4 more
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Dislocation velocity in indium phosphide
Applied Physics Letters, 1991Velocities of α, β, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated.
Koji Sumino, Ichiro Yonenaga
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Indium phosphide microwave oscillators
IEEE Transactions on Electron Devices, 1971A detailed examination has been carried out on the characteristics of transferred electron microwave oscillators constructed from epitaxial indium phosphide. Seven slices have been used, for which the layer thicknesses varied between 5.4 and 28 µm. It is shown that the mechanism of oscillation has a transit-time dependence and that the transit velocity
B.C. Taylor, D.J. Colliver
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The heat capacity of indium phosphide
Russian Journal of Physical Chemistry A, 2009The heat capacity of indium phosphide was measured over the temperature range 360–760 K using a DSM-2M differential scanning calorimeter. The thermodynamic functions of InP were calculated.
M. S. Mikhailova +2 more
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Selenium implantation in indium phosphide
Journal of Applied Physics, 1981Selenium implantation has been studied as a means of fabricating n-type layers in Fe-doped, semi-insulating indium phosphide. Channeling measurements using 1.5-MeV He ions have shown that amorphous layers (about 0.1 μm thick) are created by Se implantation at room temperature and these layers recrystallize after annealing at above 700 °C.
Shin-ichi Taka +2 more
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Unraveling the role of zinc complexes on indium phosphide nanocrystal chemistry.
Journal of Chemical Physics, 2019The addition of zinc complexes to the syntheses of indium phosphide nanocrystals (InP NCs) has become commonplace, due to their ability to alter and significantly improve observed optical properties.
B. F. P. McVey +7 more
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1999
Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties.
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Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties.
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Implantation of dopants into indium phosphide
Journal of Applied Physics, 1985Seven donors (Si, S, Ge, Se, Sn, Te, and Pb) and nine acceptors (Be, Mg, Cr, Mn, Fe, Cu, Zn, Cd, and Hg) have been implanted into liquid-encapsulated Czochralski InP(Fe). For each dopant, the first four moments of the density profile have been extracted by fitting Pearson IV distributions to secondary ion mass spectrometry data.
C. G. Hopkins +2 more
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