Results 91 to 100 of about 35,399 (274)
, 2020 The fast charge carrier recombination and slow oxidation kinetics of ternary semiconductor InGaN as promising photocatalyst impede the PEC performance. Herein, we fabricate transition metal zinc (Zn) doped InGaN nanorods arrays by radio-frequency plasma ...
Jing Lin +7 more
semanticscholar +1 more source
APL Materials, 2019 We establish the relationships between growth conditions, strain state, optical and structural properties of nonpolar m-plane (101¯0) InGaN with indium composition up to 39% grown by plasma-assisted molecular beam epitaxy.
Alexander Senichev +6 more
doaj +1 more source
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
Nanomaterials, 2018 We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN ...
Nikoletta Jegenyes +8 more
doaj +1 more source
Scientific Reports, 2018 The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency.
Shengjun Zhou +8 more
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Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures
AIP Advances, 2015 The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire
Yao Yin +8 more
doaj +1 more source
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Applied Sciences, 2019 The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron ...
Haruka Matsuura +7 more
doaj +1 more source
InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation [PDF]
, 2018 Mahdi Alqahtani +11 more
openalex +1 more source
Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN∕GaN dual-quantum-well structure [PDF]
, 2008 Kun‐Ching Shen +7 more
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PhotonicsAn electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed.
Zinan Hua +5 more
doaj +1 more source