Results 81 to 90 of about 35,399 (274)
Comparison of light extraction efficiency between InGaN and AlGaInP red micro-LED structures using numerical simulations [PDF]
AIP AdvancesFor red micro-light-emitting diode (micro-LED) structures, InGaN or AlGaInP is typically used as the active material, and these materials exhibit markedly different size-dependent external quantum efficiency (EQE) behaviors.
Chibuzo Onwukaeme, Han-Youl Ryu
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Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode
, 2012 Laser characterization can facilitate improvement in laser design by allowing optical component scientists to compare different laser designs and to confirm the validity of their theories behind their designs. Various desired characteristics of a laser are discussed. All of the following characteristics will be taken into consideration seriously during
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Advanced Physics Research, Volume 5, Issue 5, May 2026.Coherent acoustic phonons are generated and optically controlled in bulk WSSe alloy samples using ultrafast spectroscopy. The alloy exhibits a strong coherent acoustic response, which is not an intermediate state between WS? and WSe?. Instead, a much more complex mechanism is proposed.
Sergio I. Rey +11 more
wiley +1 more source
Potentials of InxGa1-xN photovoltaic tandems
Revue des Énergies Renouvelables, 2011 During the past few years a great variety of multi-junction solar cells has been developed with the aim of a further increase in efficiency beyond the limits of single junction devices.
F. Bouzid, S. Ben Machiche
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Advanced Photonics Research, Volume 7, Issue 4, April 2026.A peak external quantum efficiency (EQE) of 2.71% at 630 nm at 2.5 A/cm2 for 2 μm InGaN‐based red micro‐light‐emitting diodes deposited on a topology‐free porous template. This is the highest reported EQE for singular (nonarrayed) devices with a size < 5 μm and emitting at greater than 620 nm and shows great promise in application to AR/VR devices ...
Surjava Sanyal +10 more
wiley +1 more source
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
Optics Express, 2020 We investigated the effect of coupled quantum wells to reduce electron overflow in InGaN/GaN dot-in-a-wire phosphor-free white color light-emitting diodes (white LEDs) and to improve the device performance.
B. Jain +6 more
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Optics Express, 2017 Series of green laser diodes (LDs) with different (In)GaN barrier layers are investigated. It is found that the optical confinement factor of multi-quantum well (MQW) always increases with increasing indium content of InGaN barrier layer, which results in a decrease of threshold current when indium content of InGaN barrier layer increases from 0 to 5%.
J, Yang +10 more
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Effect of different buffer layers on the quality of InGaN layers grown on Si
AIP Advances, 2018 This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics.
V. J. Gómez +6 more
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Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
, 2020 The compliant behavior of high fill-factor 10 × 10 μm2 square patterned 60–140 nm thick GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible underlayer.
S. Pasayat +7 more
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