Results 101 to 110 of about 35,399 (274)

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells [PDF]

, 2021
Xuan Li, Jianping Liu, Xujun Su, Siyi Huang, Aiqin Tian, Wei Zhou, Lingrong Jiang, Masao Ikeda, Hui Yang   +8 more
openalex   +1 more source

InGaN-Based Light Emitting Diodes with an AlN Sacrificial Buffer Layer for Chemical Lift-Off Process [PDF]

, 2010
Chia‐Feng Lin, Jing-Jie Dai, Ming-Shiou Lin   +2 more
openalex   +1 more source

Correction to “Demonstration of 2.71% External Quantum Efficiency at 630 nm in Singular 2 μm Red InGaN Micro‐LEDs on Porous GaN for AR/VR Applications”

Advanced Photonics Research, Volume 7, Issue 5, May 2026.
wiley   +1 more source

Optical and structural properties of dislocations in InGaN [PDF]

, 2019
Fabien Massabuau, Matthew K. Horton, Emma Pearce, Simon Hammersley, Peiyu Chen, Marcin Zieliński, Thomas F. K. Weatherley, Giorgio Divitini, P. R. Edwards, Menno J. Kappers, C. McAleese, M. A. Moram, C. J. Humphreys, P. Dawson, Rachel A. Oliver   +14 more
openalex   +1 more source

Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids

Communications Materials
Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels could be achieved using monolithically integrated InGaN ...
Amélie Dussaigne, Colin Paillet, Névine Rochat, David Cooper, Adeline Grenier, Stéphane Vézian, Benjamin Damilano, Adrien Michon, Bérangère Hyot   +8 more
doaj   +1 more source

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells [PDF]

, 2022
P. Wolny, Henryk Turski, G. Muzioł, Marta Sawicka, Julita Smalc‐Koziorowska, Joanna Moneta, Anna Feduniewicz‐Żmuda, Szymon Grzanka, C. Skierbiszewski   +8 more
openalex   +1 more source

Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity\n Fiber Bragg Grating [PDF]

, 2021
Antoine Congar, M. Gay, Georges Perin, Dominique Mammez, Jean-Claude Simon, Pascal Besnard, Julien Rouvillain, Thierry Georges, Laurent Lablonde, Thierry Robin, Stéphane Trebaol   +10 more
openalex   +1 more source

Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique

International Journal of Optics
This paper employed the pulsed laser deposition (PLD) technique to synthesize InGaN/porous silicon (InGaN/Psi). The Psi was synthesized by the laser-assisted photoelectrochemical etching (LAPECE) method.
Mohammed A. Saleh, Makram A. Fakhri, Ahmad K. Ahmad   +2 more
doaj   +1 more source

GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

, 2020
S. Assa Aravindh, Bin Xin, Somak Mitra, Iman S. Roqan, Adel Najar   +4 more
openalex   +2 more sources

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

Nature Photonics, 2020
P. Iyer, R. DeCrescent, Y. Mohtashami, G. Lheureux, N. Butakov, A. Alhassan, C. Weisbuch, S. Nakamura, S. Denbaars, J. Schuller   +9 more
semanticscholar   +1 more source