Results 61 to 70 of about 35,399 (274)

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

open access: yesNanomaterials, 2018
We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED).
Quanbin Zhou   +3 more
doaj   +1 more source

Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

open access: yesAIP Advances, 2020
In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail.
Yachao Zhang   +5 more
doaj   +1 more source

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

open access: yesCrystals, 2022
Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition ...
Soichiro Morikawa   +3 more
doaj   +1 more source

The Scholar Imprisoned: Young‐Bok Shin's Decolonial Thought Against (Sub) Imperialisms in East Asia

open access: yesSociological Forum, EarlyView.
ABSTRACT This article reads Young‐Bok Shin (1941–2016) as a decolonial thinker who theorized transformative worldmaking from the standpoint of the oppressed, rooted in the historical experiences of East Asia. Against the (sub)imperial “logic of sameness” that structures colonial modernity in his social world, Shin advances gongbu (studying) as a ...
Veda Hyunjin Kim
wiley   +1 more source

Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy [PDF]

open access: green, 2022
Mylène Sauty   +9 more
openalex   +1 more source

Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells

open access: yesNanomaterials, 2022
We investigate the phase transitions and the properties of the topological insulator in InGaN/GaN and InN/InGaN double quantum wells grown along the [0001] direction.
Sławomir P. Łepkowski   +1 more
doaj   +1 more source

Recent Development in Solar‐to‐Hydrogen Conversion Systems

open access: yesWIREs Energy and Environment, Volume 15, Issue 3, September 2026.
This review compares three solar‐driven hydrogen production methods, photocatalysis (PC), photoelectrochemical cells (PEC), and photovoltaic–electrochemical (PV–EC) systems by examining their mechanisms, materials, stability, and efficiency. Nanocrystal‐based PC catalysts achieved the highest quantum efficiency (94%), while PV–EC and Si nanowire PEC ...
Rabia Zafar Ali   +3 more
wiley   +1 more source

Surface‐Plasmon‐Coupled Blue InGaN/GaN Micro‐LEDs with Oxide–Metal–Oxide Capping Layer Compatible to Chip Fabrication Process

open access: yesAdvanced Optical Materials, Volume 14, Issue 25, 3 July 2026.
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang   +17 more
wiley   +1 more source

Analysis of a novel photovoltaic/thermal system using InGaN/GaN MQWs cells in high temperature applications

open access: yes, 2021
The solar cells commonly adopted in the photovoltaic/thermal (PV/T) have negative temperature coefficients, leading to a significant decrement in electrical efficiency as cell’s temperature exceeds 80 °C, and thus the PV/T systems are mainly used at low ...
Xiao Ren   +4 more
semanticscholar   +1 more source

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

open access: yesAIP Advances, 2015
Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are ...
Yachao Zhang   +7 more
doaj   +1 more source

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