Results 71 to 80 of about 35,399 (274)

High‐Efficiency Phosphor Thin Films With Controlled Lateral Displacement for Low Color Crosstalk in Micro‐LED Displays

Journal of the Society for Information Display, Volume 34, Issue 7, Page 626-636, July 2026.
High‐efficiency nano‐phosphor thin films were developed for micro‐LED color conversion, achieving high quantum efficiency and reduced lateral photon displacement. The optimized film structure effectively suppresses color crosstalk and enables high‐performance, full‐color micro‐LED displays.
Zengzhi Pei, Justin Otto, Asim Mohammed A. Noor Elahi, Jian Xu   +3 more
wiley   +1 more source

Demonstration of low forward voltage InGaN-based red LEDs

Applied Physics Express, 2020
Here we report InGaN-based red light-emitting diodes (LEDs) grown on ( 2 ¯ 01 ) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active ...
D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, K. Ohkawa   +4 more
semanticscholar   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, Volume 12, Issue 12, 22 June 2026.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

AIP Advances, 2016
The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs.
Takao Oto, Yutaro Mizuno, Ai Yanagihara, Rin Miyagawa, Tatsuya Kano, Jun Yoshida, Naoki Sakakibara, Katsumi Kishino   +7 more
doaj   +1 more source

High‐Power Single‐Quantum‐Well 376 nm Ultraviolet A Laser with Low‐Threshold Current Density

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 6, June 2026.
A 376 nm ultra‐violet A (UV‐A) laser diode is demonstrated using a GaN waveguide and single‐quantum‐well active region to reduce optical loss and structural strain while improving carrier distribution. The device achieves 2.36 W output power, 822.9 mW/A slope efficiency, and 5.89 kA/cm2 threshold current density, showing a promising route toward high ...
Guangying Wang, Qinchen Lin, Cheng Liu, Surjava Sanyal, Matthew Dwyer, Matthew Seitz, Tom Earles, Jing Zhang, Luke Mawst, Chirag Gupta, Shubhra S. Pasayat   +10 more
wiley   +1 more source

Full InGaN red light emitting diodes

, 2020
The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec, namely, InGaNOS, a n-doped buffer layer formed by a set of InxGa1−xN/GaN ...
A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta   +13 more
semanticscholar   +1 more source

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits

Nanomaterials, 2018
Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-
Mengling Liu, Jie Zhao, Shengjun Zhou, Yilin Gao, Jinfeng Hu, Xingtong Liu, Xinghuo Ding   +6 more
doaj   +1 more source

AI‐Organized Multiscale Battery Modeling: Linking Structure and Property from Quantum to Device Scales

Small Structures, Volume 7, Issue 6, June 2026.
Multiscale modeling of battery systems combines quantum‐mechanical calculations, atomistic simulations, and mesoscale phase‐field approaches to describe processes spanning from reaction energetics to morphology evolution. Establishing consistent links between these scales remains a key challenge, particularly for the transfer of physical descriptors ...
Shoutong Jin, Ziyuan Wang, Mengke Li, Zeyu Deng   +3 more
wiley   +1 more source

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes [PDF]

, 2023
Rongxing Cao, Wei Mo, Tao Zhu, Qihong Lu, Cong Sun, Lin Zhao, Yuxiong Xue, Xianghua Zeng   +7 more
openalex   +1 more source