Results 51 to 60 of about 35,399 (274)

Highly efficient blue crystalline organic light‐emitting diodes enabled by a hot exciton sensitizer PyPO

FlexMat, EarlyView.
Two different sensitization structures (hot exciton sensitizer type and exciton nanoaggregate type) were integrated into crystalline host matrix. The resulting crystalline organic light‐emitting diodes exhibit low Joule heat loss ratio and high photon output.
Hao Hu, Bo Yu, Ping Lu, Feng Zhu, Donghang Yan   +4 more
wiley   +1 more source

InGAN: Capturing and Retargeting the “DNA” of a Natural Image

IEEE International Conference on Computer Vision, 2019
Generative Adversarial Networks (GANs) typically learn a distribution of images in a large image dataset, and are then able to generate new images from this distribution. However, each natural image has its own internal statistics, captured by its unique
Assaf Shocher, Shai Bagon, Phillip Isola, M. Irani   +3 more
semanticscholar   +1 more source

Deep levels induced optical memory effect in thin InGaN film

AIP Advances, 2018
An optical memory effect is found in a 20 nm InGaN film. With increasing illumination time, photoluminescence (PL) intensity of InGaN rises at first and then falls.
B. B. Wang, J. J. Zhu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, W. Liu, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, M. Li   +12 more
doaj   +1 more source

Body‐integrated photonic biosensors: Illuminating the path to active healthcare

FlexMat, EarlyView.
Body‐integrated photonic biosensors are promising tools for active healthcare. These optical devices can be worn, implanted, or swallowed to monitor health signals continuously. This review introduces key sensing modalities, including fluorescence, colorimetry, SPR, LSPR, SERS, and light‐modulating materials.
Jiayue Gu, Xingming Wen, Qihang Yan, Yining Zhao, Linghao Yuan, Siyuan Chen, Yue Ma, Zhengyue Fang, Dong Lei, Yuxin Liu, Ze Xiong   +10 more
wiley   +1 more source

Effects of indium segregation and strain on near-infrared optical absorption in InGaN/GaN quantum wells

Frontiers in Nanotechnology
In this study, we present a novel numerical model that incorporates the effects of spontaneous and piezoelectric polarization-induced electric fields, along with multiple intersubband transitions, to investigate the optical absorption characteristics of ...
Haddou El Ghazi, Redouane En-nadir, Mohamed A. Basyooni-M. Kabatas, Mohamed A. Basyooni-M. Kabatas, Mohamed A. Basyooni-M. Kabatas, Jamal Eldin F. M. Ibrahim, Ahmed Sali   +6 more
doaj   +1 more source

Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer

AIP Advances, 2023
Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs ...
Xuan Li, Jianping Liu, Aiqin Tian, Lei Hu, Xiaoyu Ren, Siyi Huang, Wei Zhou, Dan Wang, Deyao Li, Hui Yang   +9 more
doaj   +1 more source

Large‐Area Atomically Flat Monocrystalline Gold Flakes: Recent Advances, Applications, and Future Potential

Small, EarlyView.
This review surveys large‐area monocrystalline gold flakes, covering synthesis, growth mechanisms, and structural properties. It highlights their role as atomically flat, highly conductive platforms for precise nanostructuring, enabling applications such as plasmonics, sensing, and nanoelectronics.
Amro O. Sweedan, Kefan Zhang, Muhammad Y. Bashouti, Thorsten Feichtner   +3 more
wiley   +1 more source

Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence [PDF]

, 2023
Conny Becht, Ulrich T. Schwarz, Michael Binder, Bastian Galler   +3 more
openalex   +1 more source

Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn

Physics Procedia, 2009
AbstractWe have studied the emission mechanism of InGaN/GaN nanocolumns. We extracted only the effect of localized states and investigated the difference between InGaN/GaN single-quantum-disc (SQD) and InGaN nanocolumns by means of photoluminescence and photoluminescence excitation measurements.
Suzuki, Naoki, Kouyama, Kazuaki, Insose, Yuta, Kunugita, Hideyuki, Ema, Kazuhiro, Sekiguchi, Hiroto, Kikuchi, Akihiko, Kisino, Katumi   +7 more
openaire   +1 more source

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source