Results 31 to 40 of about 35,399 (274)

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

, 2020
This work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers.
D. Iida, Zhe Zhuang, P. Kirilenko, Martin Velazquez-Rizo, M. Najmi, K. Ohkawa   +5 more
semanticscholar   +1 more source

Cubic InGaN Grown by Mocvd [PDF]

MRS Proceedings, 1998
AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements.
J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang   +4 more
openaire   +1 more source

Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study

Хімія, фізика та технологія поверхні
The energy storage was probed by hybrid materials of GaN, InN, InGaN, Si@InGaN, Zn@InGaN, Ag@InGaNusing first-principles studies. Electromagnetic and thermodynamic properties of GaN, InN, InGaN, Si@InGaN, Zn@InGaN, Ag@InGaN hetero clusters have been ...
F. Mollaamin
doaj   +1 more source

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Science and Technology of Advanced Materials, 2016
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ($ 11\bar{2}0 $) a-plane and ($ 10\bar{1}0 $) m-plane free-standing bulk GaN substrates where the In content varied ...
Dmytro Kundys, Danny Sutherland, Matthew J. Davies, Fabrice Oehler, James Griffiths, Philip Dawson, Menno J. Kappers, Colin J. Humphreys, Stefan Schulz, Fengzai Tang, Rachel A. Oliver   +10 more
doaj   +1 more source

Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures

Nanomaterials, 2020
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts.
Sung-Un Kim, Yong-Ho Ra
doaj   +1 more source

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Crystals, 2021
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire.
R. White, Hongjian Li, Michel Khoury, C. Lynsky, M. Iza, S. Keller, D. Sotta, S. Nakamura, S. Denbaars   +8 more
semanticscholar   +1 more source

Photoluminescence Properties of InGaN/InGaN MQWs with Different Electron Injection Layers

European Journal of Applied Physics, 2023
The structural and optical properties of InxGa1-xN/InyGa1-yN multi quantum well (MQW) light emitting devices with/without electron injection layers were studied. The samples with electron injection layer consist of step-graded (GIE) and two step staircase (SEI) electron injection layer between n-type GaN and MQWs active region.
openaire   +1 more source

Anisotropic Strain Relaxation in Semipolar $\left(11\overline{2}2\right)$ InGaN/GaN Superlattice Relaxed Templates

Nanomaterials, 2022
Semipolar (112¯2) InGaN/GaN superlattice templates with different periodical InGaN layer thicknesses were grown on m-plane sapphire substrates using metal-organic chemical vapor deposition (MOCVD).
Wenlong Li, Lianshan Wang, Ruohao Chai, Ling Wen, Zhen Wang, Wangguo Guo, Huanhua Wang, Shaoyan Yang   +7 more
doaj   +1 more source

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Applied Physics Letters
In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 A/cm2.
Dong-gun Lee, Youngjin Choi, S. Jung, Yongmin Kim, Sooyoung Park, PunJae Choi, Sukho Yoon   +6 more
semanticscholar   +1 more source

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

AIP Advances, 2015
Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting
Yu Kee Ooi, Jing Zhang
doaj   +1 more source