Results 11 to 20 of about 35,399 (274)

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications [PDF]

Discover Nano, 2023
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications.
Fu‐He Hsiao, Tzu‐Yi Lee, Wen‐Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun‐Liang Lin, Fang‐Chung Chen, Chi‐Wai Chow, Chien‐Chung Lin, Ray‐Hua Horng, Jr‐Hau He, Kazuhiro Ohkawa, Yu‐Heng Hong, Chiao‐Yun Chang, Hao‐Chung Kuo   +14 more
openalex   +2 more sources

Highly efficient blue InGaN nanoscale light-emitting diodes

Nature, 2022
Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability1–5.
M. Sheen, Yunhyuk Ko, Dong-uk Kim, Jongil Kim, Jin-ho Byun, Yong-Hee Choi, Jong Y. Ha, Ki Young Yeon, Dohyung Kim, Jun Jung, Jinyoung Choi, Ran Kim, Jewon Yoo, Inpyo Kim, Chan-Gyu Joo, Nam-Ho Hong, J. Lee, S. Jeon, S. Oh, Jaekwang Lee, Nari Ahn, Changhee Lee   +21 more
semanticscholar   +1 more source

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Light: Science & Applications, 2023
We develop a double-layer thin-film structure for active-matrix displays using InGaN/AlGaInP heterogeneous integration and demonstrate a prototype of full-color micro-LED micro-display with a pixel density of 391 ppi.
Longheng Qi, Peian Li, Xu Zhang, K. Wong, K. Lau   +4 more
semanticscholar   +1 more source

Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses

Nature Photonics, 2021
InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization ...
Jinjoo Park, Jun-hee Choi, Kiho Kong, J. Han, Junghwan Park, N. Kim, Eunsung Lee, Dongho Kim, Joosung Kim, D. Chung, S. Jun, Miyoung Kim, E. Yoon, Jaikwang Shin, S. Hwang   +14 more
semanticscholar   +1 more source

Polarity dependence of In-rich InGaN and InN/InGaN MQWs [PDF]

MRS Proceedings, 2005
AbstractIn-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500 ...
Songbek Che, Takuro Shinada, Tomoyasu Mizuno, Yoshihiro Ishitani, Akihiko Yoshikawa   +4 more
openaire   +3 more sources

Segregation of In to Dislocations in InGaN [PDF]

Nano Letters, 2015
Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N ...
Horton, MK, Rhode, S, Sahonta, S-L, Koppers, MJ, Haigh, SJ, Pennycook, TJ, Humphreys, CJ, Dusane, RO, Moram, MA   +8 more
openaire   +4 more sources

Study on the effect of size on InGaN red micro-LEDs

Scientific Reports, 2021
In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology.
R. Horng, Chunya Ye, Po-Wei Chen, D. Iida, K. Ohkawa, Yuh‐Renn Wu, D. Wuu   +6 more
semanticscholar   +1 more source

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

AIP Advances, 2022
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission.
D. Iida, P. Kirilenko, Martin Velazquez-Rizo, Zhe Zhuang, M. Najmi, K. Ohkawa   +5 more
semanticscholar   +1 more source

Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions

Applied Physics Letters, 2022
n-InGaN/p-Cu2O core-shell nanowire (NW) p–n junctions enable efficient self-powered photoelectrochemical photodetectors (PEC PDs) in the visible. The photocurrent density under one-sun illumination is enhanced by 8 times compared to that of bare InGaN NW
Jialin Wang, Jiaxun Song, Ling Qin, Yingchun Peng, R. Nötzel   +4 more
semanticscholar   +1 more source

A Comparative Study of BSF Layers for InGaN Single-Junction and Multi-Junction Solar Cells [PDF]

Journal of Optoelectronical Nanostructures
The tunability of the InGaN band gap energy over a wide range provides a noble spectral match to sunlight, making it a suitable material for photovoltaic solar cells.
Maryam Amirhoseiny, Majid Zandi, Ahad Kheiri   +2 more
doaj   +1 more source