Results 21 to 30 of about 35,399 (274)

Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect. [PDF]

Light Sci Appl
The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR.
Liu Z, Cao H, Tang X, Liu T, Lu Y, Jiang Z, Xiao N, Li X.   +7 more
europepmc   +2 more sources

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Japanese Journal of Applied Physics, 2021
InGaN-based LEDs are efficient light sources in the blue–green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency.
Zhe Zhuang, D. Iida, K. Ohkawa
semanticscholar   +1 more source

Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]

Serbian Journal of Electrical Engineering
This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
doaj   +1 more source

Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates

Scientific Reports, 2023
We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8° toward the m-plane. The surface of N-polar InGaN with small-offset substrates exhibited hexagonal hillocks similar to those commonly observed
Mohammed A. Najmi, Pavel Kirilenko, Daisuke Iida, Kazuhiro Ohkawa   +3 more
doaj   +1 more source

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH₃ Flux

Crystals, 2023
In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes
Zhenyu Chen, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Desheng Jiang   +5 more
doaj   +1 more source

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

, 2021
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are desirable for future high-resolution displays and lighting products.
Xiaoyu Zhao, Bin Tang, Liyan Gong, J. Bai, Jiafeng Ping, Shengjun Zhou   +5 more
semanticscholar   +1 more source

Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED

EPJ Web of Conferences, 2017
This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN ...
Rashid Shanise, Wahid M.Halim A., Ahmad Hambali N. Azura M., Abdul Halim N.Syafira, Shahimin Mukhzeer M.   +4 more
doaj   +1 more source

SLALOM: Open-source, portable, and easy-to-use solar cell optimizer. Application to the design of InGaN solar cells

EPJ Photovoltaics, 2018
The design and optimization of novel structures is an essential part of the next-generation solar cells development. Indeed, the technological steps involved in the development of high-performance solar cells involve a huge set of interdependent physical
Ould Saad Hamady Sidi, Fressengeas Nicolas   +1 more
doaj   +1 more source

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Crystals, 2021
InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted ...
Xue Zhang, Wenxian Yang, Zhiwei Xing, Haibing Qiu, Ying Gu, Lifeng Bian, Shulong Lu, Hua Qin, Yong Cai, Yuta Suzuki, Sakuya Kaneko, Yuki Matsuda, Shinji Izumi, Yuichi Nakamura, Atsushi Tackeuchi   +14 more
doaj   +1 more source

Investigating defects in InGaN based optoelectronics: from material and device perspective

Materials Research Express, 2023
III-nitride optoelectronics have revolutionized solid-state lighting technology. However, non-radiative defects play a major bottleneck in determining the performance of InGaN-based optoelectronics devices.
Dhiman Nag, Swagata Bhunia, Ritam Sarkar, Soumyadip Chatterjee, Apurba Laha   +4 more
doaj   +1 more source