Results 1 to 10 of about 15,987 (184)
The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes [PDF]
Advanced ScienceWe demonstrate that the primary factor determining the external quantum efficiency (EQE) of InGaN‐based micro‐scale light‐emitting diodes (µLEDs) depends on their internal state. A comparative photoluminescence (PL) study shows that the lateral diffusion
Jeong‐Hwan Park +11 more
doaj +3 more sources
Electrochem, 2022 The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and
D Parajuli +2 more
exaly +3 more sources
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
Nanomaterials, 2021 An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and ...
Liwen Cheng, Haitao Chen, Shudong Wu
exaly +3 more sources
Progress of InGaN-Based Red Micro-Light Emitting Diodes
Crystals, 2022 InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect.
Panpan Li, Hongjian Li, Matthew S Wong
exaly +3 more sources
Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs [PDF]
Ядерна фізика та енергетика, 2023 We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K.
T. I. Mosiuk +6 more
doaj +1 more source
Crystals, 2022 We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO ...
Narihito Okada, Kazuyuki Tadatomo
doaj +1 more source
Структурные и оптические свойства InGaN нитевидных нанокристаллов c градиентным химическим составом
Конденсированные среды и межфазные границы, 2023 В настоящее время значительный интерес для создания устройств разложения воды под действием солнечного света представляют тройные соединения InGaN. Однако основной трудностью в синтезе данной группы материалов является подверженность слоёв InxGa1–xN ...
Владислав Олегович Гридчин +6 more
doaj +1 more source
Applied Sciences, 2020 Junction temperature (Tj) and current have important effects on light-emitting diode (LED) properties. Therefore, the electroluminescence (EL) spectra of blue and green LEDs were investigated in a Tj range of 120−373 K and in a current range of 80&#
Sai Pan +5 more
doaj +1 more source
IEEE Photonics Journal, 2021 Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror laser projectors often require the use of both III-V and III-Nitride material systems for different pixel/laser colors.
Bryan Melanson, Cheng Liu, Jing Zhang
doaj +1 more source
Nanomaterials, 2023 We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material.
Siyun Noh +4 more
doaj +1 more source