Results 41 to 50 of about 35,399 (274)
Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations
Applied Sciences, 2019 InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral ...
Zhi Ting Ye +4 more
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When Cubic is Not Isotropic: Phonon–Exciton Decoupling in CuInSnS4 Single Crystals
Advanced Optical Materials, EarlyView.A cubic CuInSnS4 crystal does not fully play by cubic rules. While phonons follow the average iso‐tropic lattice symmetry, the disorder‐localized excitons break away, showing strong, and reproduci‐ble polarization‐dependent emission. This work shows how intrinsic cation disorder can turn a mac‐roscopically cubic material into a source of hidden ...
Lara Kim Linke +11 more
wiley +1 more source
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Optics Express, 2014 Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far.
Zhang, Z. H. +12 more
openaire +5 more sources
Advances in Materials Science and Engineering, 2014 We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer.
T. F. Gundogdu, M. Gökkavas, E. Ozbay
doaj +1 more source
IEEE Photonics Journal, 2018 GaN-based laser diodes (LDs) with different barrier layers are investigated by using simulation and experimental methods. it is found that the absorption loss always decreases with the increasing indium content of the InGaN barrier layer in InGaN/ ...
Jing Yang +10 more
doaj +1 more source
Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN
Results in Physics, 2020 This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts.
Abdullah Al Mamun Mazumder +5 more
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Advanced Science, EarlyView.This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung +12 more
wiley +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
International Journal of Photoenergy, 2012 The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work.
Ming-Hsien Wu +5 more
doaj +1 more source
InGaN/Cu2O Heterostructure Core-Shell Nanowire Photoanode for Efficient Solar Water Splitting
Frontiers in Physics, 2021 The heterostructuring and doping concepts have proved to obtain a novel n-InGaN/p-Cu2O nanowire (NW) photoanode by strong enhancement of the photocurrent compared to a bare InGaN NW photoanode in solar water splitting.
Yingzhi Zhao +9 more
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