Results 261 to 270 of about 1,646,245 (299)

On the interface state density at In0.53Ga0.47As/oxide interfaces

Applied Physics Letters, 2009
The authors model the capacitance-voltage (CV) behavior of In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures and compare the results to experimental CV-curves. Due to the very low conduction band density of states, ideal III-V MOS structures should present an asymmetric CV behavior, with lower accumulation capacitance on the conduction band ...
BRAMMERTZ, Guy, Lin, H-C., Caymax, M., MEURIS, Marc, Heyns, M., Passlack, M.   +5 more
openaire   +2 more sources

Properties of interface states at Ta2O5/n-Si interfaces

Journal of Applied Physics, 1998
Properties of interface states at Ta2O5/n-Si interfaces are studied by capacitance–voltage and deep-level transient spectroscopy (DLTS) measurements. The results show that the “slow” states at Ta2O5/n-Si interfaces are not significantly affected by annealing, and their density is about 1.4–1.9×1011 cm−2.
S. K. Zhang, Z. W. Fu, L. Ke, F. Lu, Q. Z. Qin, Xun Wang   +5 more
openaire   +1 more source

Interface states model for III–V oxide interfaces

Microelectronic Engineering, 2009
A general model of the density of interface states at III-V oxide interfaces is presented. The interface states arise from the native defects, such as Ga or As dangling bonds and Ga-Ga or As-As like-atom bonds created by oxidation. As-As bonds are a likely cause of states at the conduction band edge of GaAs.
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The state of tangible interfaces

CHI '06 Extended Abstracts on Human Factors in Computing Systems, 2006
In recent years, the CHI community has seen growth in projects that involve tangible user interfaces and tangible interaction. But, many researchers feel that this emerging field lacks in justifying research, industry adoption, and conceptual frameworks.
Oren Zuckerman, Brygg Ullmer, Lars Erik Holmquist, Hiroshi Ishii, George Fitzmaurice, Yvonne Rogers, Wendy Mackay, Tom Rodden   +7 more
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Interface states at the anodized Al2O3-metal interface

Journal of Applied Physics, 2001
The capacitance of Al–Al2O3-metal capacitors with Al2O3 of different thicknesses, formed by anodizing evaporated Al films in ethylene glycol-based or H2O-based electrolytes to different voltages, has been measured between 10 kHz and 1 MHz for ten metal electrodes.
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Intrinsic SiC/SiO2 Interface States

physica status solidi (a), 1997
The energy distribution of electron states at SiC/SiO 2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy. A similar distribution of interface traps over the SiC bandgap is observed for different polytypes indicating a common nature of interfacial
V. V. Afanasev, M. Bassler, G. Pensl, M. Schulz   +3 more
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Model of interface states at III-V oxide interfaces

Applied Physics Letters, 2009
We present a generalized model of the density of interface states at III-V oxide interfaces. The states are based on the native defects such as dangling bonds on the Ga and As sites or As–As bonds created by oxidation. The model explains the difficulty of n-type operation for GaAs field effect transistors (FETs) compared to GaAs pFETs or to InGaAs ...
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Microcomputer-aided interface-state analysis

IEE Proceedings I Solid State and Electron Devices, 1980
A semiautomatic measurement system has been developed for evaluating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in a real-time mode.
P.J. Martin, G.G. Roberts
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Semiconductor Surface and Interface States

1992
The investigation and understanding of the atomic structure and electronic properties of semiconductor surfaces and interfaces is a challenging area of current research. Because properties at surfaces are often drastically different from those in the bulk, many fundamental aspects of physics and chemistry are involved.
Ross D. Bringans, Robert Z. Bachrach
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Interfaces in Solid‐State Reactions

Berichte der Bunsengesellschaft für physikalische Chemie, 1986
AbstractIllustrations of the structure of phase boundaries involved in solid‐state reactions in ceramic oxides and of the formation of grain boundaries by the movement of phase boundaries are presented. Examples of experimental studies have been chosen to emphasise how both the cations and anions can influence the structure of the phase boundaries and ...
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