Results 261 to 270 of about 6,332,703 (315)

Superconducting-Quasiparticle Interface States

Physical Review Letters, 1985
We describe superconducting-quasiparticle interface states which are produced by a certain class of local potentials at interfaces involving superconductors. These states penetrate at least a coherence distance into the superconductor and arise even when the pair potential is uniform throughout the superconductor.
, DeWeert, , Arnold
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Interface states at the Ga–GaAs interface

Journal of Vacuum Science and Technology, 1978
A variable-excitation energy photoemission study has been made of the occupied states near the Ga–GaAs (110) interface as the interface is formed. Using a combination of valence and core-level spectroscopy, new aspects of the interface electronic structure have been deduced.
R. Z. Bachrach, A. Bianconi
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Interface States in SiInxPyOz–InSb Interfaces

Physica Status Solidi (a), 1991
MIS structures are fabricated on n-type InSb. As gate insulators, SiInxPyOz layers are formed by new low-temperature processes. The MIS capacitance is measured at 1 MHz and 100 K. The interface state density in the energy range from Ec to midgap is about (1.1 to 3.0) × 1012 cm−2 eV−1.
K. Hattori, Y. Torii
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Interface states of ZnSe/GaAs interface

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
The in-plane anisotropy (εx≠εy) and the off-plane anisotropy (εx≠εz) of ZnSe/GaAs interfaces formed under conditions that promote the formation of either Zn–As or Ga–Se bonds are studied by reflectance difference spectroscopy. Two resonance lines, one at 2.70 eV and the other around 3.0 eV, have been observed. The in-plane anisotropy is along the [110]
Yang, Zhi Yu, Sou, Iam Keong, Yeung, YH, Wong, George K L, Wang, Jie, Jin, Caixia, Hou, Xiaoyuan   +6 more
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The distortion of the interface-state spectrum due to nonequilibrium occupancy of the interface states at the metal-semiconductor interface

Journal of Applied Physics, 1987
Using the Shockley–Read–Hall statistics and considering the charge exchanges between metal and interface states, the effects of nonequilibrium occupancy on the interface-state spectrum measured from a forward-biased Schottky barrier diode have been studied, both theoretically and experimentally. It is shown that due to the rapid interaction between the
Hsun-Hua Tseng, Ching-Yuan Wu
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Solid-state and biological systems interface

2012 Proceedings of the ESSCIRC (ESSCIRC), 2012
Solid-state electronic devices can be engineered to detect and manipulate biological molecules and cells by using electric or magnetic interactions. The integrated circuits, which can contain a large number of such devices, may then potentially be developed into low-cost chip-scale platforms to perform bioanalytical tasks in a multiplexed manner for ...
Nan Sun 0003, Yong Liu 0023, Ling Qin, Guangyu Xu, Donhee Ham   +4 more
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Role of Interfaces in Solid‐State Batteries

Advanced Materials, 2023
AbstractSolid‐state batteries (SSBs) are considered as one of the most promising candidates for the next‐generation energy‐storage technology, because they simultaneously exhibit high safety, high energy density, and wide operating temperature range. The replacement of liquid electrolytes with solid electrolytes produces numerous solid–solid interfaces
Xiang Miao, Shundong Guan, Cheng Ma, Liangliang Li, Ce‐Wen Nan   +4 more
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Interface states at the SiO2-Si interface

Surface Science Letters, 1983
Abstract The present understanding of interface states at the SiO2-Si interface is reviewed. Typical results of measurement techniques are presented and critically discussed with respect to identification of types and origins of interface states. Only one type of interface state is observed after strong hydrogen annealing.
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Relativistic state equations for the interface

Journal of Colloid and Interface Science, 2005
Relativistic state equations were obtained for various interfaces and cases. The relativistic state equation was done for perfect gases as well.
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Electronic interface states at the Pt/Co interface

Journal of Magnetism and Magnetic Materials, 1993
Abstract The electronic structure of Pt overlayers on Co(0001) was investigated by spin-resolved and spin-integrated photoemission spectroscopy. The Pt/Co interface exhibits electronic interface states of mainly Pt-5d character. One of these interface states shows a peak separation of its spin components of about 170 meV indicating magnetic ...
W. Weber, D.A. Wesner, D. Hartmann, U.A. Effner, G. Güntherodt   +4 more
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