Results 21 to 30 of about 3,381 (218)
Interface Edge Mode Confinement in Dielectric-Based Quasi-Periodic Photonic Crystal Structure
In this paper, the localization of optical interface edge-states is analyzed for a dielectric material-based quasi-periodic photonic crystal (QPhC) structure.
Amit Kumar Goyal, Yehia Massoud
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The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
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Active interface polarization as a state function [PDF]
6 pages, 1 ...
Sophie Hermann, Matthias Schmidt
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Francisella tularensis (F. tularensis) is the causative agent of tularemia and is classified as a Tier 1 select agent. No licensed vaccine is currently available in the United States and treatment of tularemia is confined to few antibiotics.
Ky V. Hoang +8 more
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The need for sustainable chemicals has increased the numbers of published studies about photocatalytic hydrogen production via photoreforming and water-splitting. However, comparison of results, already complicated by non-standardized reaction setups and
Larissa Y. Kunz +4 more
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Photonic topological Lifshitz interfaces
The intrinsic geometry of wavevector diagrams describes electronic or photonic transport at a given energy level. Lifshitz transition is an intriguing example of the topological transition in wavevector diagrams, which plays a critical role in abnormal ...
Piao Xianji, Shin Jonghwa, Park Namkyoo
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Individual susceptibility determines the magnitude of stress effects on cognitive function. The hippocampus, a brain region of memory consolidation, is vulnerable to stressful environments, and the impact of stress on hippocampus may determine individual
Seung H. Jung +4 more
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Stability of a nonequilibrium steady-state interface [PDF]
We study the interfacial modes of a driven diffusive model under suitable nonequilibrium conditions leading to possible instability. The external field parallel to the interface, which sets up a steady-state parallel flux, enhances the growth or decay rates of the interfacial modes. More dramatically, asymmetry in the model can introduce an oscillatory
Hernández Machado, Aurora +1 more
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Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin(Rs) Sc2O3 (Skandiyum oksit) MOS (Metal OksitYarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansabağlı olarak incelemektir.
Ercan Yılmaz, Ayşegül Kahraman
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Energy concepts involved in MOS characterization
Starting from a quantum statistical reasoning, it is demonstrated that entropy properties of silicon/silicon dioxide interface electron traps may have a strong influence on measured distributions of interface states, depending on measurement method used.
Olof Engström +2 more
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