Results 91 to 100 of about 3,728 (141)

The Principle and Application of Achromatic Metalens. [PDF]

Micromachines (Basel)
Liu R, Li L, Zhou J.
europepmc   +1 more source

Phonon-polaritonic skyrmions: transition from bubble- to Néel-type. [PDF]

Light Sci Appl
Mangold F, Baù E, Nan L, Schwab J, Gölz T, Mancini A, Frank B, Tittl A, Giessen H.   +8 more
europepmc   +1 more source

Miniaturisation of Raman spectroscopy systems: from benchtop to backpocket.

Lab Chip
Hardy M, Kanade PP, Buchan E, Goldberg Oppenheimer P, McPolin CPT, Bowman RM.   +5 more
europepmc   +1 more source

Real-world impact of inverse lithography technology

SPIE Proceedings, 2005
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment.
Linyong Pang
exaly   +3 more sources

A Gradient-Based Inverse Lithography Technology for Double-Dipole Lithography

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009
Resolution enhancement techniques (RETs) have become indispensable for the sub-wavelength optical lithography. Inverse lithography technology (ILT) is one kind of RETs, which attempts to consider the mask synthesis as an inverse problem and compute the optimum mask by using the entire area of the design pattern with a rigorous mathematical approach ...
Min-Chun Tsai
exaly   +4 more sources

SRAF placement and sizing using inverse lithography technology

SPIE Proceedings, 2007
The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementation of Inverse Lithography Technology (ILT) to determine optimized SRAF placement and size.
Timothy Lin, Frederic Robert, Amandine Borjon, Gordon Russell, Catherine Martinelli, Andrew Moore, Yves Rody   +6 more
exaly   +3 more sources

Advanced memory cell design optimization with inverse lithography technology

Design-Process-Technology Co-optimization for Manufacturability XIV, 2020
Memory cells and access structures consume a large percentage of area in embedded devices so there is a high return from shrinking the cell area as much as possible. This aggressive scaling leads to very difficult resolution, 2D CD control and process window requirements.
Shigeki Nojima, Kyle Braam, Guangming Xiao   +2 more
exaly   +4 more sources

Inverse lithography technology principles in practice: unintuitive patterns

SPIE Proceedings, 2005
In this paper we present unintuitive patterns generated by inverse lithography technology. We show examples of contact hole masks designed with ILT that enjoy larger process windows than OPC. We also show variations in ILT-generated masks as the pitch of the contact hole array changes.
Linyong Pang
exaly   +3 more sources

Fast inverse lithography technology

SPIE Proceedings, 2006
Many RET technologies, such as rule and model based OPC, the use of sub-resolution assist features, and various PSM methodologies, can be thought of as heuristics employed in an attempt to design improved photomasks. Unfortunately, these traditional approaches are running into severe difficulties at advanced technology nodes (90nm and beyond).
Daniel S. Abrams, Linyong Pang
openaire   +2 more sources

Inverse lithography technology at chip scale

SPIE Proceedings, 2006
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We discuss some specifics of ILT at chip-scale. We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing results from ILT-generated masks and OPC-generated masks for ...
Benjamin Lin, Ming Feng Shieh, Jie-wei Sun, Jonathan Ho, Yan Wang, Xin Wu, Wolfgang Leitermann, Orson Lin, Jason Lin, Yong Liu, Linyong Pang   +10 more
openaire   +2 more sources