Results 101 to 110 of about 168 (150)

Comparison of a Miniaturized Implantable Two‐Stage Rotodynamic Blood Pump to Equivalent Single‐Stage Concepts

Artificial Organs, Volume 50, Issue 8, Page 1125-1135, August 2026.
This study aims to evaluate the potential of a multistage pump design to enhance hemocompatibility in left ventricular assist devices. We found that the two‐stage concept offers favorable hemolysis measures compared to single‐stage designs, as the reduction in peak shear stresses outweighs the disadvantage associated with prolonged residence time ...
Sarah Linnemeier, Bente Thamsen, Stefan Maric, Bernhard Semlitsch, Benjamin Torner, Daniel Zimpfer, Marcus Granegger   +6 more
wiley   +1 more source

Optical Phased Arrays on Photonic Integrated Circuit Platforms: Challenges, Opportunities, and Future Applications

Nanophotonics, Volume 15, Issue 14, 27 July 2026.
Integrated optical phased arrays are emerging as scalable engines for solid‐state beam steering and programmable wavefront control. This Review maps the field from beam‐steering principles and core building blocks to material platforms, system‐level bottlenecks, and application frontiers, highlighting how heterogeneous integration, aperiodic ...
Jingwei Li, Yuyuan Han, Aoxiang Chen, Pengpeng Li, Xinglin Zhu, Guanbao Zhao, Luohan Peng, Huaibin Zheng   +7 more
wiley   +1 more source

Inverse‐Designed Silicon Nitride Bimodal Mode Converter for Interferometric Sensors

Nanophotonics, Volume 15, Issue 14, 27 July 2026.
Inverse‐designed bimodal mode converters are demonstrated on two silicon nitride platforms. The devices convert the fundamental mode into near‐balanced pairs of the fundamental and higher‐order modes up to the third order. They are compact and fabrication‐tolerant. Characterization of a bimodal interferometer incorporating these converters demonstrates
Narges Dalvand, Julian L. Pita Ruiz, Boris Le Drogoff, Mohamed Chaker, Michaël Ménard   +4 more
wiley   +1 more source

Variations in Stochastic Magnetic Tunnel Junctions

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
This work presents a reproducible fabrication method for nanoscale stochastic magnetic tunnel junctions (s‐MTJs) using undercut‐assisted e‐beam lithography, end‐point‐controlled etching, and in situ passivation. The study identifies key variation sources, such as static characteristic variations in TMR, resistance, coercive field, and loop shift ...
Ki Hyuk Han, YongJin Kim, Deok Hyun Yun, Jeoung Ung Ahn, Cheol Jun Kim, Young‐Jun Nah, Min‐Gu Kang, Seokmin Hong, Hyun Cheol Koo, OukJae Lee   +9 more
wiley   +1 more source

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Fast inverse lithography technology

SPIE Proceedings, 2006
Many RET technologies, such as rule and model based OPC, the use of sub-resolution assist features, and various PSM methodologies, can be thought of as heuristics employed in an attempt to design improved photomasks. Unfortunately, these traditional approaches are running into severe difficulties at advanced technology nodes (90nm and beyond).
Linyong Pang
exaly   +2 more sources

Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation

SPIE Proceedings, 2006
This paper presents the results of applying ILT to SMIC's first 65nm tape out. ILT mathematically determines the mask features that produce the desired on-wafer results for best pattern fidelity, largest process window or an desired combination of both.
Grace Dai, Linyong Pang, Kechang Wang
exaly   +2 more sources

Inverse lithography technology principles in practice: unintuitive patterns

SPIE Proceedings, 2005
In this paper we present unintuitive patterns generated by inverse lithography technology. We show examples of contact hole masks designed with ILT that enjoy larger process windows than OPC. We also show variations in ILT-generated masks as the pitch of the contact hole array changes.
Linyong Pang
exaly   +2 more sources

SRAF placement and sizing using inverse lithography technology

SPIE Proceedings, 2007
The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementation of Inverse Lithography Technology (ILT) to determine optimized SRAF placement and size.
Timothy Lin, Frederic Robert, Amandine Borjon, Gordon Russell, Catherine Martinelli, Andrew Moore, Yves Rody   +6 more
exaly   +2 more sources

Real-world impact of inverse lithography technology

SPIE Proceedings, 2005
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment.
Linyong Pang
exaly   +2 more sources

Evaluation of inverse lithography technology for 55nm-node memory device

Proceedings of SPIE, 2008
Model based OPC has been generally used to correct proximity effects down to ~50 nm critical dimensions at k1 values around 0.3. As design rules shrink and k1 drops below 0.3, however; it is very hard to obtain enough process window and acceptable MEEF (Mask Error Enhancement Factor) with conventional model based OPC.
Thuc Dam, Bob Gleason, Donggyu Yim
exaly   +2 more sources