A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
Japanese Journal of Applied Physics, 2008Pattern reduction has generated much interest in developing effective methods of reducing the feature sizes of microelectronic and data-storage devices. For below-32-nm node technology, the bottom-up approach, namely, self-assembly, has obstacles such as the insufficient support of processes and mass production, and the top-down approaches, namely ...
Sang-Kon Kim +3 more
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A new algorithm of inverse lithography technology for mask complexity reduction
Journal of Semiconductors, 2012A new complexity penalty term called the global wavelet penalty is introduced, which evaluates the high-frequency components of masks more profoundly by applying four distinctive Haar wavelet transforms and choosing the optimal direction on which the highest frequency components of the mask will be removed.
Yanghuan Li +4 more
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Inverse Lithography Technology (ILT) Enabled Source Mask Optimization (SMO)
ECS Transactions, 2009In the first implimentation by Luminescent of ILT-enabled Source-Mask Optimization (SMO), an ILT-optimized mask was generated for each designated illumination condition as the source was swept through various parameter settings in order to find the best combination of source and mask.
Linyong Pang +7 more
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Laser and e-beam mask-to-silicon with inverse lithography technology (ILT)
SPIE Proceedings, 2005This paper presents ILT masks written by a DUV laser writer and a VSB e-beam writer, and their corresponding wafer print results. ILT mathematically determine the mask features that produce the desired on-wafer results. ILT-generated masks sometimes are non-intuitive, and different than those produced by past approaches; therefore, their ...
Linyong Pang +3 more
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Overcome the process limitation by using inverse lithography technology with assist feature
SPIE Proceedings, 2011Patterning of contact hole using KrF lithography system for the sub 90nm technology node is one of the most challenging tasks. Contact hole pattern can be printed using Off-Axis Illumination(OAI) such as dipole or Quasar or Quadrupole at KrF lithography system.
Yeon-Ah Shim +13 more
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Improvement of KrF contact layer by inverse lithography technology with assist feature
SPIE Proceedings, 2010Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI) such as Quasar or Quadrupole.
Sungho Jun +13 more
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MTO-like reference mask modeling for advanced inverse lithography technology patterns
SPIE Proceedings, 2017Advanced Inverse Lithography Technology (ILT) can result in mask post-OPC databases with very small address units, all-angle figures, and very high vertex counts. This creates mask inspection issues for existing mask inspection database rendering. These issues include: large data volumes, low transfer rate, long data preparation times, slow inspection ...
Jongju Park +12 more
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Deep Learning-Driven Inverse Lithography Technology for Dmd-Based Maskless Projection Lithography
2023Jing-Tao Chen +3 more
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An Approach to Extracting SRAF Rules from Inverse Lithography Technology Results
2023 International Workshop on Advanced Patterning Solutions (IWAPS), 2023Yao Jin +10 more
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