Results 61 to 70 of about 3,871 (202)

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

Advanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang, Dooyong Koh, Brooke McGoldrick, Tudor Mocioi, Yabin Fan, Marc Baldo, Luqiao Liu   +6 more
wiley   +1 more source

High‐Efficiency InGaP‐on‐Insulator Microresonator Nonlinear Conversion and Entanglement Generation

Advanced Science, EarlyView.
Sulfur treatment of InGaP‐on‐Insulator (InGaP‐OI) significantly reduces surface roughness, passivates surface states, and lowers propagation loss at visible wavelengths, enabling efficient nonlinear frequency conversion and photon‐pair generation.
Xuefeng Li, Lillian Thiel, Yiming Pang, Amalu Shimamura, Lucas Wang, Joshua E. Castro, Max Meunier, Nicholas Lewis, John E. Bowers, Kevin L. Silverman, Richard P. Mirin, Galan Moody   +11 more
wiley   +1 more source

Spatiotemporal Computational Meta‐Imager for Broadband Dual‐Layer Optical Convolution

Advanced Science, EarlyView.
A single‐layer polarization‐multiplexed meta‐imager achieves factorized dual‐layer broadband convolution via spatiotemporal kernel decomposition. Fixed Bessel‐vortex bases and time‐sequential liquid‐crystal modulation deliver tunable signed weights and in‐situ fabrication‐error compensation. Experiments verify improved classification performance across
Mengguang Wang, Chenglong Zheng, Huaping Zang, Changwei Zhang, Huai Xia, Chang Wang, Zhenrong Zheng   +6 more
wiley   +1 more source

Intelligent Field‐Adaptive Electrohydrodynamic Printing for Curved Conformal Electronics

Advanced Science, EarlyView.
To mitigate residual‐charge accumulation and spatial electric‐field variations during electrohydrodynamic printing on curved insulating substrates, an intelligent field‐adaptive framework combines alternating‐electric‐field modulation, equivalent electrical gap characterization, and machine‐learning‐guided parameter inversion and pathwise regulation ...
Chang Liu, Yiwen Feng, Xu Chen, Kaiwen Chen, Ran Zhang, Xiaopeng Zhang, Liujia Suo, Xiangji Chen, Zefei Li, Fengshu Wang, Ruixuan Xu, Shuaiwu Liu, Shiwen Liang, Lingjie Kong, Dazhi Wang   +14 more
wiley   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +1 more source

Robust NbN‐on‐Si/SiGe Hybrid Microwave Quantum Circuits With Long‐Term Stability

Advanced Electronic Materials, EarlyView.
Superconducting NbN resonators integrated with Si/SiGe quantum wells based semiconducting chip are investigated as a CMOS–compatible platform for scalable quantum hardware. Temperature–dependent microwave spectroscopy reveals loss mechanisms from TLS, quasiparticles, and scattering.
Paniz Foshat, Samane Kalhor, Shima Poorgholam‐khanjari, Douglas Paul, Martin Weides, Kaveh Delfanazari   +5 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Harnessing the VO2 Phase Transition for Automatic Gain Control in Transimpedance Amplifiers

Advanced Electronic Materials, EarlyView.
A nanoscale VO2‐based volatile switch integrated into a transimpedance‐amplifier feedback loop dynamically lowers gain when input current rises, preventing saturation and extending dynamic range. Rapid self‐recovery restores high sensitivity without external reset circuitry.
Amir Gildor, Sariel Hodisan, Shahar Kvatinsky, Yoav Kalcheim   +3 more
wiley   +1 more source

Real‐Time Multicolor Fluorescence Microscopy via Cross‐Channel Acquisition and Deep‐Learning‐Based Inference

Advanced Intelligent Discovery, EarlyView.
Sequential multicolor fluorescence imaging in dynamic microsystems is constrained by acquisition speed and excitation dose. This study introduces a real‐time framework to reconstruct spectrally separated channels from reduced cross‐channel acquisitions (frames containing mixed spectral contributions).
Juan J. Huaroto, Yuxin Jin, Nicholas Roy, Sarthak Misra   +3 more
wiley   +1 more source

Ultralow‐Power Floating‐Gate InGaZnO Content‐Addressable Memory for Wearable Electrocardiogram Anomaly Detection

Advanced Intelligent Systems, EarlyView.
This study introduces a subthreshold in‐memory anomaly detection architecture for wearable ECG monitoring using floating‐gate IGZO content‐addressable memories on a flexible substrate. Area‐engineered coupling provides a high subthreshold slope, while subthreshold operation realizes intrinsic exponential distance evaluation and linear voltage sensing ...
Hyung‐Jun Noh, Sunyeol Bae, Yumin Yun, Junhyeong Park, Soo‐Yeon Lee   +4 more
wiley   +1 more source