Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation [PDF]
In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions
Felix Junge +3 more
doaj +2 more sources
Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices [PDF]
Gallium nitride (GaN) offers exceptional material properties, making it indispensable in communications, defense, and power electronics. With high electron mobility and robust thermal conductivity, GaN-based devices excel in high-frequency, high-power ...
Hao Lu +8 more
doaj +2 more sources
Enhanced Antibacterial Effect on Zirconia Implant Abutment by Silver Linear-Beam Ion Implantation [PDF]
Peri-implant lesions, such as peri-implant mucositis and peri-implantitis, are bacterial-derived diseases that happen around dental implants, compromising the long-term stability and esthetics of implant restoration.
Yang Yang +5 more
doaj +2 more sources
Elemental characterization of sparkling wine and cork stoppers
The variations of the elemental concentrations in sparkling white wine and respective cork stoppers throughout 18 months of storage time were determined with the PIXE (Particle-Induced X-ray Emission) technique.
Rafaela Debastiani +2 more
doaj +1 more source
Tailoring of physical properties of (K,Na)NbO3 thin films using lithium ion implantation
The present study demonstrates the tuning of structural, topography, and luminescence properties of 30 keV Li-ion implanted (K,Na)NbO3 thin films synthesized using RF sputtering.
Radhe Shyam +9 more
doaj +1 more source
Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation
The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work.
Yanrong Wang +9 more
doaj +1 more source
Nanoscale ion implantation using focussed highly charged ions
We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond ...
Paul Räcke +4 more
doaj +1 more source
Ion implantation and low-temperature epitaxial regrowth of GaAs [PDF]
Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∼400 °C). The implantation‐
Grimaldi, M. G. +3 more
core +1 more source
Optical doping and damage formation in AIN by Eu implantation [PDF]
AlN films grown on sapphire were implanted with 300 keV Eu ions to fluences from 3×1014 to 1.4×1017 atoms/cm2 in two different geometries: “channeled” along the c-axis and “random” with a 10° angle between the ion beam and the surface normal.
Alves, E. +6 more
core +3 more sources
Ion beam engineering of implanted ZnO thin films for solar cell and lighting applications
Ion beam modification is a one-of-a-kind approach for engineering nanomaterials to change their chemical and physical properties. Ion beam engineering of metal oxide semiconductor nanoparticles has been performed to improve their optoelectronic ...
Vinod Kumar +5 more
doaj +1 more source

