Detection of small bunches of ions using image charges
Scientific Reports, 2018 A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of ...
Paul Räcke +4 more
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Study on the growth and the photosynthetic characteristics of low energy C(+) ion implantation on peanut. [PDF]
PLoS ONE, 2013 Employing the Nonghua 5 peanut as experimental material, the effects of low energy C(+) ion implantation on caulis height, root length, dry weight, photosynthetic characteristics and leaf water use efficiency (WUE) of Peanut Ml Generation were studied ...
Yuguo Han +3 more
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Implanted Layer Characterization
Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems), 2016 In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials.
Adharul Muttaqin, Irman Idris
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MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices [PDF]
, 1990 We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are compared with implantation at 500 keV. In addition to Al intermixing in the direct lattice damage
Schwartz, C. L. +3 more
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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Crystals, 2023 Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization.
Alan G. Jacobs +6 more
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Properties of polyamide 6 and polyvinylidene fluoride nanofibers irradiated by H+ ions [PDF]
EPJ Web of Conferences, 2022 This work deals with the modification of polymeric nanofibers of polyamide 6 (PA6) and polyvinylidene fluoride (PVDF) which were formed by electrospinning process.
Štěpanovská Eva +4 more
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Numerical Analysis of Magnetized Sheath for Inner Surface Modification
IEEE Access, 2019 A fluid model of the magnetized sheath has been built using ion motion equation, ion continuity equation, Poisson's equation, and Boltzmann's relationship of electron for plasma-based low-energy ion implantation (PBLEII) inner surface modification of a ...
Yi Li +3 more
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Sequential nature of damage annealing and activation in implanted GaAs [PDF]
, 1989 Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first.
Bai, G. +4 more
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n-type chalcogenides by ion implantation [PDF]
Nature Communications, 2014 Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in ...
M. Hughes +10 more
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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Advances in Materials Science and Engineering, 2012 Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single
Jeffrey C. McCallum +7 more
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