Results 11 to 20 of about 2,620,128 (158)

Alloyed β-(AlxGa1−x)2O3 bulk Czochralski single β-(Al0.1Ga0.9)2O3 and polycrystals β-(Al0.33Ga0.66)2O3, β-(Al0.5Ga0.5)2O3), and property trends [PDF]

Journal of Applied Physics, 2022
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed β-Ga2O3—monoclinic 10% AGO or β-(Al0.1Ga0.9)2O3—are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped β-Ga2O3. Further, growths of 33%
J. Jesenovec, B. Dutton, N. Stone-Weiss, A. Chmielewski, Muad Saleh, Carl Peterson, N. Alem, S. Krishnamoorthy, J. McCloy   +8 more
semanticscholar   +1 more source

Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation [PDF]

Journal of Crystal Growth, 2021
This is the first part of a two-article series that deals with the investigation of the anomalous behaviour in the radius measurement signal of the Czochralski (Cz) process and its mitigation in a feedback control system.
H. Z. Bukhari, M. Hovd, J. Winkler
semanticscholar   +1 more source

Inverse response behaviour in the bright ring radius measurement of the Czochralski process II: Mitigation by control [PDF]

, 2021
This is the second part of a two-article series investigating the presence of an inverse response in the measurement of the ingot radius in the Czochralski process for monocrystalline silicon production, when the ingot radius is deduced from a camera ...
H. Z. Bukhari, M. Hovd, J. Winkler
semanticscholar   +1 more source

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

Crystals, 2023
The evolution of the dislocation density during Czochralski growth is computed by the combination of global thermal calculations and local computation of the stress and dislocation density in the crystal.
Wolfram Miller, A. Sabanskis, Alexander Gybin, K. Gradwohl, A. Wintzer, K. Dadzis, J. Virbulis, R. Sumathi   +7 more
semanticscholar   +1 more source

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Crystals, 2021
Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite
A. Sabanskis, M. Plāte, A. Sattler, Alfred Miller, J. Virbulis   +4 more
semanticscholar   +1 more source

Electronic and optical properties of Zn-doped β-Ga2O3 Czochralski single crystals

, 2021
β-Ga2O3 has several soluble deep acceptors that impart insulating behavior. Here, we investigate Zn doping (0.25 at. %) in bulk Czochralski and vertical gradient freeze β-Ga2O3.
J. Jesenovec, J. Varley, S. Karcher, J. McCloy   +3 more
semanticscholar   +1 more source

Diode Laser‐Crystallization for the Formation of Passivating Contacts for Solar Cells

physica status solidi (RRL) – Rapid Research Letters, Volume 16, Issue 5, May 2022., 2022
A new method of laser treatment of passivated contacts for wafer solar cell application was investigated. The Czochralski wafer samples were deposited with highly doped amorphous silicon layers on both sides. The samples are scanned with two different speeds and the corresponding power densities.
Annett Gawlik, Raphael Glatthaar, Andrea Dellith, Guobin Jia, Jan Dellith, Barbara Terheiden, Jonathan Plentz   +6 more
wiley   +1 more source

Investigation of the Defect Distribution of Laser Contact Opening Applied to Poly‐Si/SiNx Stacks

physica status solidi (a), Volume 219, Issue 8, April 2022., 2022
For poly‐Si contact schemes, an intact interfacial oxide is crucial. Using a tetramethylammonium hydroxide (TMAH) etch, the defects in the oxide due to laser ablation of SiNx on poly‐Si are magnified. The defect density is significantly increased in areas where adjacent laser pulses overlap.
Bernd Steinhauser, Varun Arya, Leonie Jakob, Friedemann D. Heinz, Christian Schmiga, Benjamin Grübel, Andreas A. Brand, Sven Kluska, Jan F. Nekarda   +8 more
wiley   +1 more source

Evolution of Corrosive Potential‐Induced Degradation at the Rear Side of Bifacial Passivated Emitter and Rear Solar Cells

physica status solidi (RRL) – Rapid Research Letters, Volume 16, Issue 2, February 2022., 2022
Potential‐induced degradation is a severe reliability problem for photovoltaic cells and modules. A corrosive potential‐induced degradation mechanism at the rear side of bifacial solar cells is investigated. This potential‐induced degradation effect is nonreversible and shows typical surface and subsurface damages on the micrometer scale, which are ...
Kai Sporleder, Jan Bauer, Bengt Jäckel, Volker Nauman, Marko Turek, Christian Hagendorf   +5 more
wiley   +1 more source

Nanomechanical characterisation of single‐crystal Bi2Se3 topological insulator

Micro &Nano Letters, Volume 16, Issue 3, Page 203-212, 4 March 2021., 2021
Abstract Topological insulators (TIs) are recently discovered high‐tech materials where their potential use in nanoelectronic devices such as spintronics and quantum computers, due to their unique electronic features, can be a solution to the emerging need for high‐bit data processing.
Utku Uzun, Mehmet Yetmez, Nurgül Akıncı   +2 more
wiley   +1 more source