Results 11 to 20 of about 94 (88)
Diode Laser‐Crystallization for the Formation of Passivating Contacts for Solar Cells
physica status solidi (RRL) – Rapid Research Letters, Volume 16, Issue 5, May 2022., 2022 A new method of laser treatment of passivated contacts for wafer solar cell application was investigated. The Czochralski wafer samples were deposited with highly doped amorphous silicon layers on both sides. The samples are scanned with two different speeds and the corresponding power densities.
Annett Gawlik +6 more
wiley +1 more source
Investigation of the Defect Distribution of Laser Contact Opening Applied to Poly‐Si/SiNx Stacks
physica status solidi (a), Volume 219, Issue 8, April 2022., 2022 For poly‐Si contact schemes, an intact interfacial oxide is crucial. Using a tetramethylammonium hydroxide (TMAH) etch, the defects in the oxide due to laser ablation of SiNx on poly‐Si are magnified. The defect density is significantly increased in areas where adjacent laser pulses overlap.
Bernd Steinhauser +8 more
wiley +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 16, Issue 2, February 2022., 2022 Potential‐induced degradation is a severe reliability problem for photovoltaic cells and modules. A corrosive potential‐induced degradation mechanism at the rear side of bifacial solar cells is investigated. This potential‐induced degradation effect is nonreversible and shows typical surface and subsurface damages on the micrometer scale, which are ...
Kai Sporleder +5 more
wiley +1 more source
Nanomechanical characterisation of single‐crystal Bi2Se3 topological insulator
Micro &Nano Letters, Volume 16, Issue 3, Page 203-212, 4 March 2021., 2021 Abstract Topological insulators (TIs) are recently discovered high‐tech materials where their potential use in nanoelectronic devices such as spintronics and quantum computers, due to their unique electronic features, can be a solution to the emerging need for high‐bit data processing.
Utku Uzun +2 more
wiley +1 more source
Solar RRL, Volume 5, Issue 1, January 2021., 2021 Radio frequency magnetron sputtered titanium‐doped indium oxide (ITiO) films are fabricated in a low‐temperature process. Oxygen flow ratio plays a vital role in the influence of ITiO crystalline growth, as well as optoelectronic properties. It is demonstrated that ITiO films in the front of silicon heterojunction solar cells result in better ...
Zhirong Yao +12 more
wiley +1 more source
Journal of Applied Crystallography, Volume 53, Issue 4, Page 880-884, August 2020., 2020 White beam X‐ray topography has been performed to provide direct evidence of micro‐voids in dislocation‐free high‐purity germanium single crystals. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.White‐beam X‐ray topography has been performed to provide direct evidence of micro ...
Kevin-P. Gradwohl +7 more
wiley +1 more source
Crystal Research and Technology, Volume 55, Issue 2, February 2020., 2020 This article gives an overview about the development of the Erlangen Crystal Growth Laboratory from its beginnings in 1974 until its current status as a department “Materials” of the Fraunhofer‐Institute for Integrated Systems and Device Technology.
Jochen Friedrich, Georg Müller
wiley +1 more source
Professional Education: Methodology, Theory and Technologies, 2023 The article analyses the life path and activities of the world-recognized Polish scientist, inventor, metallurgist, patron and philanthropist, writer, professor of the Warsaw Polytechnic Jan Czochralski (1885 - 1953). He is considered one of the four most famous and most cited Polish scientists who influenced the development of civilization.
Vladyslav Verbets, Oleksandra Yankovych
openaire +1 more source
Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations
Crystal Research and Technology, Volume 55, Issue 2, February 2020., 2020 This review deals first with the spontaneous transition of cylindrically growing Czochralski crystals to the growth in spiral morphology. Further, the growth of a full spiral is described considering the azimuthal growth in the off‐centered rotating melt meniscus.
Dietrich G. Schwabe
wiley +1 more source
Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique
Crystal Research and Technology, Volume 55, Issue 2, February 2020., 2020 This contribution proposes a method for the automated growth of silicon–germanium (SiGe) crystals. To be used as X‐ray and γ‐ray monochromators such crystals must have a constant germanium concentration gradient in their body. This can be achieved by growing them in a special shape.
Nikolay V. Abrosimov +3 more
wiley +1 more source