Results 21 to 30 of about 2,620,128 (158)

Influence of Oxygen on Sputtered Titanium‐Doped Indium Oxide Thin Films and Their Application in Silicon Heterojunction Solar Cells

open access: yesSolar RRL, Volume 5, Issue 1, January 2021., 2021
Radio frequency magnetron sputtered titanium‐doped indium oxide (ITiO) films are fabricated in a low‐temperature process. Oxygen flow ratio plays a vital role in the influence of ITiO crystalline growth, as well as optoelectronic properties. It is demonstrated that ITiO films in the front of silicon heterojunction solar cells result in better ...
Zhirong Yao   +12 more
wiley   +1 more source

Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals

open access: yesJournal of Applied Crystallography, Volume 53, Issue 4, Page 880-884, August 2020., 2020
White beam X‐ray topography has been performed to provide direct evidence of micro‐voids in dislocation‐free high‐purity germanium single crystals. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.White‐beam X‐ray topography has been performed to provide direct evidence of micro ...
Kevin-P. Gradwohl   +7 more
wiley   +1 more source

The Figure of Jan Czochralski as an Example of a Scientist, Teacher and Patriot for the Youth of Today to Imitate (1885 – 1953)

open access: yesProfessional Education: Methodology, Theory and Technologies, 2023
The article analyses the life path and activities of the world-recognized Polish scientist, inventor, metallurgist, patron and philanthropist, writer, professor of the Warsaw Polytechnic Jan Czochralski (1885 - 1953). He is considered one of the four most famous and most cited Polish scientists who influenced the development of civilization.
Vladyslav Verbets, Oleksandra Yankovych
openaire   +1 more source

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

open access: yesCrystal Research and Technology, Volume 55, Issue 2, February 2020., 2020
This article gives an overview about the development of the Erlangen Crystal Growth Laboratory from its beginnings in 1974 until its current status as a department “Materials” of the Fraunhofer‐Institute for Integrated Systems and Device Technology.
Jochen Friedrich, Georg Müller
wiley   +1 more source

Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations

open access: yesCrystal Research and Technology, Volume 55, Issue 2, February 2020., 2020
This review deals first with the spontaneous transition of cylindrically growing Czochralski crystals to the growth in spiral morphology. Further, the growth of a full spiral is described considering the azimuthal growth in the off‐centered rotating melt meniscus.
Dietrich G. Schwabe
wiley   +1 more source

Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique

open access: yesCrystal Research and Technology, Volume 55, Issue 2, February 2020., 2020
This contribution proposes a method for the automated growth of silicon–germanium (SiGe) crystals. To be used as X‐ray and γ‐ray monochromators such crystals must have a constant germanium concentration gradient in their body. This can be achieved by growing them in a special shape.
Nikolay V. Abrosimov   +3 more
wiley   +1 more source

Comments on the paper by Mariusz W. Majewski published in Studia Historiae Scientiarum 17 (2018), pp. 89–117

open access: yesStudia Historiae Scientiarum, 2019
Several remarks on the text by Mariusz W. Majewski devoted to the history of the Institute of Metallurgy and Metal Science at the Technical University of Warsaw, and on the role of Prof. Jan Czochralski, are presented.
Paweł E. Tomaszewski
doaj   +1 more source

Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

open access: yesphysica status solidi (b), Volume 257, Issue 1, January 2020., 2020
Apparently contradicting experiments on the light‐induced degradation (LID) in boron‐doped oxygen‐containing crystalline silicon are resolved by introduction of a concept of different kinds of activating impurities participating in boron–oxygen recombination centers.
Jan Schmidt   +3 more
wiley   +1 more source

Temperature Measurement Using Optical Fiber Methods: Overview and Evaluation

open access: yesJournal of Sensors, Volume 2020, Issue 1, 2020., 2020
The paper deals with the overview of fiber optic methods suitable for temperature measurement and monitoring. The aim is to evaluate the current research of temperature measurements in the interval from temperature close to 0 up to 1000°C. Since the measuring chain is a functional combination of optical methods, optical fiber properties, and other ...
Martin Mikolajek   +9 more
wiley   +1 more source

Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

open access: yesCrystals, 2019
A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for ...
W. Miller   +6 more
semanticscholar   +1 more source

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