Results 31 to 40 of about 2,620,128 (158)

The works of the Institute of Metallurgy and Metallurgical Sciences at the Warsaw University of Technology, and the person of Jan Czochralski (in Polish)

Studia Historiae Scientiarum, 2018
The article discusses the issues of implementation of important achievements in the field of metallurgy (including armored weapons, fortifications and the navy), under the supervision of prof.
Mariusz W. Majewski
doaj   +1 more source

Limitations on control performance in the Czochralski crystal growth process using bright ring measurement as a controlled variable

IFAC-PapersOnLine, 2019
This paper develops a dynamical model for crystal diameter in the Czochralski process for production of monocrystalline silicon. The model combines simplified crystal growth dynamics with rigorous ray tracing to describe the camera image used for ...
H. Z. Bukhari, M. Hovd, J. Winkler
semanticscholar   +1 more source

Nauka i uczeni w biografiach Anny Czerwińskiej-Rydel

Acta Universitatis Lodziensis. Folia Librorum, 2018
Publikacje poświęcone nauce stanowią ważną część współczesnego rynku książki dla dzieci. W zdecydowanej większości mają one formę dostosowanych do wieku dziecka leksykonów i miniencyklopedii, zarówno o charakterze ogólnym, jak i poświęconych określonemu ...
Rafał Kępa
doaj   +1 more source

Jan Czochralski – pionier światowej elektroniki i inżynierii materiałowej

Dzieje Najnowsze, 2020
Artykul ma na celu przedstawienie sylwetki Jana Czochralskiego, światowej slawy naukowca XX w. Jego glownym osiągnieciem bylo wynalezienie metody uzyskiwania monokrysztalow, do dziś stosowanej w produkcji ukladow scalonych wielkiej skali integracji. Po zakonczeniu II wojny światowej Czochralski calkowicie bezpostawnie zostal oskarzony o kolaboracje z ...
openaire   +2 more sources

Occupation as Social Practice and Ambiguous Space: The Lives of Ludwik Hirszfeld and Jan Czochralski in Warsaw, 1939–44

Acta Poloniae Historica, 2022
This article evaluates the situation of two renowned scientists in Poland, namely the microbiologist and serologist Ludwik Hirszfeld (1884–1954), and the metallurgist Jan Czochralski (1885–1953), during the time of the German occupation from 1939–45. Both scientists strove to continue their scientific work even under the conditions of occupation but ...
openaire   +1 more source

TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers

Solar RRL, Volume 9, Issue 16, August 2025.
This study investigates the suitability of epitaxially grown silicon wafers for tunnel oxide passivating contact (TOPCon) solar cells in particular the high temperature stability required for boron emitter diffusion. Efficiencies up to 24.4% and 24.7% for n‐type and p‐type wafers were achieved, respectively, which demonstrate the suitability of ...
Armin Richter, Marion Drießen, Clara Rittmann, Giuliano Vescovi, Maxi Richter, Florian Schindler, Jan Benick, Charlotte Weiss, Stefan Janz   +8 more
wiley   +1 more source

Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential‐Induced Degradation at the Rear Side

physica status solidi (a), Volume 216, Issue 17, September 2019., 2019
Bifacial passivated emitter and rear cells (PERC+) can suffer from a potential‐induced degradation (PID) at the rear side. A microstructural analysis shows localized spots with increased carrier recombination as the origin of the power losses. A corrosion of the silicon bulk at the silicon/aluminium oxide interface is the root cause of the degradation.
Kai Sporleder, Volker Naumann, Jan Bauer, Susanne Richter, Angelika Hähnel, Stephan Großer, Marko Turek, Christian Hagendorf   +7 more
wiley   +1 more source

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025)

Advanced Materials Interfaces, Volume 12, Issue 2, January 20, 2025.
Czochralski Method High‐angle annular dark‐field scanning transmission electron microscopy image of a β‐(Al0.2Ga0.8)2O3 crystal along the [010] projection grown by the Czochralski method. More details can be found in article 2400122 by Zbigniew Galazka and co‐workers.
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Palvan Seyidov, Saud Bin Anooz, Roberts Blukis, Jana Rehm, Kornelius Tetzner, Mike Pietsch, Andrea Dittmar, Steffen Ganschow, Arub Akhtar, Thilo Remmele, Martin Albrecht, Tobias Schulz, Ta‐Shun Chou, Albert Kwasniewski, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann   +19 more
wiley   +1 more source

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang   +5 more
wiley   +1 more source

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron‐Boron Related Complexes in Silicon

International Journal of Photoenergy, Volume 2015, Issue 1, 2015., 2015
The behavior of iron, iron‐boron (FeB) pairs, and iron‐boron‐phosphorus (FeB‐P) complexes has been studied in B‐doped Czochralski silicon with phosphorus (P) compensation and compared with that in uncompensated material. The interstitial iron concentration has been measured at temperatures from 50 to 270°C.
Xiaodong Zhu, Xuegong Yu, Peng Chen, Yong Liu, Jan Vanhellemont, Deren Yang, Yanfa Yan   +6 more
wiley   +1 more source