Results 31 to 40 of about 616,094 (331)
Power converter junction temperature measurement using infra‐red sensors [PDF]
Studies demonstrate that the power converter has one of the highest failure rates in a wind turbine, with a key failure driver being the power module junction temperature ( T j ).
Smith, C.J. +4 more
openaire +4 more sources
Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions
We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence ...
E. Sawaguchi +5 more
core +1 more source
Competition between electronic cooling and Andreev dissipation in a superconducting micro-cooler [PDF]
We discuss very low temperature experiments on superconducting micro-coolers made of a double Normal metal - Insulator - Superconductor junction. We investigate with a high resolution the differential conductance of the micro-cooler as well as of ...
A. Bardas +23 more
core +4 more sources
C-type thermocouples are widely used to measure rich combustions; however, the measured temperature, i.e., the thermocouple junction temperature, is not equal to the gas temperature.
Linqing Zhang +4 more
doaj +1 more source
Research on IGBT junction temperature model based on united-parameters
The insulated gate bipolar transistor (IGBT) is the most expensive central component in the converter interior, but it is also one of the most vulnerable to failure. The failure of power electronic system is mainly due to temperature change.
Lingfeng Shao +3 more
doaj +1 more source
Proximity effect in planar Superconductor/Semiconductor junction
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier).
Bakker +9 more
core +1 more source
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu +5 more
doaj +1 more source
ВИЗНАЧЕННЯ ДОДАТКУ ДО ЗНАЧЕННЯ ТЕПЛОВОГО ОПОРУ СИЛОВИХ НАПІВПРОВІДНИКОВИХ ПРИЛАДІВ
Ця стаття присвячена обгрунтуванню методики визначення додатку до значення теплового опору напівпровідникового приладу для постійного струму, який дає можливість визначити максимальну температуру напівпровідникової структури приладу при навантажені ...
V. S. Ostrenko
doaj +1 more source
High Frequency Quantum Admittance and Noise Measurement with an On-chip Resonant Circuit
By coupling a quantum detector, a superconductor-insulator-superconductor junction, to a Josephson junction \textit{via} a resonant circuit we probe the high frequency properties, namely the ac complex admittance and the current fluctuations of the ...
A. Barone +7 more
core +1 more source
ВИЗНАЧЕННЯ ТЕМПЕРАТУРИ IGBT МОДУЛЯ ПЕРЕТВОРЮВАЧА ЧАСТОТИ ПРИ ПУСКУ АСИНХРОНОГО ДВИГУНА
Запропонована методика виконання розрахунків для визначення типу IGBT модуля, значення температури структур транзисторів та діодів зворотного струму у перетворювачі частоти електропривода змінного струму при пуску двигуна в залежності від статичного ...
V. S. Ostrenko, T. V. Kritska
doaj +1 more source

