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Highly tunable band structure in ferroelectric R-stacked bilayer WSe₂. [PDF]

Nat Commun
Li Z, Thor P, Kourmoulakis G, Ivanova TV, Taniguchi T, Watanabe K, Yu H, Brotons-Gisbert M, Gerardot BD.   +8 more
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K-band diamond MESFETs for RFIC technology

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009
Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration.
Calvani, P, Corsaro, A, Rossi, MC, Conte, G, Giovine, E, CICCOGNANI, WALTER, LIMITI, ERNESTO   +6 more
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High-K band structures in 164Er

Zeitschrift für Physik A Hadrons and Nuclei, 1997
Several of the known rotational bands in 164Er are extended considerably (to around 35 h). In addition, a new coupled band is established and found to decay by an isomeric transition with t1/2 ≥ 170 nsec, to the 11t - state of the known Kπ =7− two-quasi-proton band. The new band is interpreted as a four-quasi-particle structure, with measured values of
P. Bosetti, G. B. Hagemann, H. Ryde, A. Brockstedt, H. Carlsson, L. P. Ekstrom, A. Nordlund, B. Herskind, S. Leoni, A. Bracco, S. Frattini, M. Mattiuzzi, B. Million, C. Rossi Alvarez, G. de Angelis, D. Bazzacco, LUNARDI, SANTO, R. A. Bark, M. De Poli, F. Camera   +19 more
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K-band capacitive MEMS-switches

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397), 2002
In this paper single-pole single-throw K-band microelectro-mechanical capacitive switches are discussed, exhibiting low insertion losses (
M. Ulm, T. Walter, R. Mueller-Fiedler, K. Voigtlaender, E. Kasper   +4 more
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Optically controlled K-band oscillator

IEEE International Digest on Microwave Symposium, 2002
PIN photodiodes play an important role in detection of modulated light in fiberoptic links, however, these devices are essentially junction devices, with bias-dependent capacitance very similar to those of varactor diodes. Particularly under proper biasing conditions, junction capacitance of these devices can be changed by light illumination.
R. Saedi, T. Berceli, A.S. Daryoush, P.R. Herczfeld   +3 more
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K-Band Waveguide Bragg Structures

2006 16th International Crimean Microwave and Telecommunication Technology, 2006
The possibility for controlling band-gap parameters of Bragg structure at variation of its period has been shown. Periodic dielectric structures have been proposed to be used as waveguide filters of mm, sub-mm and THz ranges with different frequency characteristics.
V. Danilov, V. Oliynik
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K-band adjustable noise generators

Instruments and Experimental Techniques, 2012
K-band (18–37 GHz) adjustable noise generators based on waveguide matched loads are presented. The physical temperature of the load absorber is maintained at a specified level with accuracy no more than ±0.007 K by a digital multichannel temperature-stabilized system.
V. Yu. Bykov, G. N. Il’in
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K-Band BARITT Doppler Detectors

MTT-S International Microwave Symposium Digest, 2005
The properties of K-band BARITT devices for use as self-mixing doppler detectors have been studied experimentally and with a simplified computer model. The computer results predict sensitive BARITT doppler operation even at low power levels. The experimental results show that the BARITT is superior to both IMPATT and Gunn devices for use as self ...
J.R. East, P.J. McCleer, G.I. Haddad
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Silicon micromachined K-band filters

2012 International Conference on Computing, Electronics and Electrical Technologies (ICCEET), 2012
This paper describes a substrate integrated waveguide (SIW) based filter at K band frequency on silicon substrate. TMAH etching is used to form the via-holes for SIW cavities. Simulations and comparison of TMAH and Deep reactive ion etching (DRIE) etched cavity has been presented.
Sumit Kumar Khandelwal, Deepak Bansal, K J Rangra   +2 more
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