Results 131 to 140 of about 25,000 (165)
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Open-loop band excitation Kelvin probe force microscopy
Nanotechnology, 2012A multidimensional scanning probe microscopy approach for quantitative, cross-talk free mapping of surface electrostatic properties is demonstrated. Open-loop band excitation Kelvin probe force microscopy (OL BE KPFM) probes the full response-frequency-potential surface at each pixel at standard imaging rates.
Senli, Guo +2 more
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Kelvin probe force microscopy: measurement data reconstruction
SPIE Proceedings, 2009The Kelvin Probe Force Microscopy (KPFM) is a method to detect the surface potential of micro- and nanostructured samples using a common Scanning Probe Microscope (SPM). The electrostatic force has a very long range compared to other surface forces. By using SPM systems the KPFM measurements are performed in the noncontact region at surface distances ...
Torsten Machleidt +4 more
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2009
The current essay deals with the Kelvin probe Force Microscopy (KPFM) technique. In the first chapter, the basic theoretical background is set together with some practical aspects that are crucial for the proper implementation of the experiments. In chapter 2, we focus on the most relevant parameters for the technique in order to figure out the manner ...
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The current essay deals with the Kelvin probe Force Microscopy (KPFM) technique. In the first chapter, the basic theoretical background is set together with some practical aspects that are crucial for the proper implementation of the experiments. In chapter 2, we focus on the most relevant parameters for the technique in order to figure out the manner ...
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Kelvin probe force microscopy study on nanotriboelectrification
Applied Physics Letters, 2010Nanotriboelectrification is studied by a Kelvin probe force microscopy (KFM)-based method. The electrostatic potentials produced by the friction between the atomic force microscope tips and the substrates are recorded with KFM and the electric quantity is calculated.
Hao Sun +4 more
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Scanning Probe Microscopy: Ultrasonic Force and Scanning Kelvin Probe Force Microscopy
2004In 1981, Gerd Binning and Heinrich Rohree at IBM Zurich developed the first generation of the scanning probe microscope, the scanning tunneling microscope for which they received the Noble Prize in physics. The Scanning Tunneling Microscope (STM) was a fantastic breakthrough with its capability to image atoms with angstrom precision.
C. Druffner +4 more
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Kelvin Probe Force Microscopy of Semiconductors
2007Due to their technological importance, III–V compound semiconductors have been widely studied. While extensive work has been done on their geometric and electronic structure, Kelvin probe force microscopy (KPFM) in ultrahigh vacuum (UHV) creates the possibility to study the electronic structure of the surfaces on a nanometer scale [1].
Y. Rosenwaks +5 more
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Practical aspects of Kelvin probe force microscopy
Review of Scientific Instruments, 1999We discuss practical aspects of Kelvin probe force microscopy (KFM) which are important to obtain stable images of the electric surface potential distribution at high spatial resolution (<100 nm) and high potential sensitivity (<1 mV) on conducting and nonconducting samples.
H. O. Jacobs, H. F. Knapp, A. Stemmer
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Principles of Kelvin Probe Force Microscopy
2007In this chapter we describe and discuss Kelvin probe force microscopy (KPFM), a scanning probe microscopy technique designed to obtain laterally resolved work function images by measuring the electrostatic forces between probe and sample surface. By operating the microscope in ultrahigh vacuum, even absolute work function measurements with very high ...
Th. Glatzel +4 more
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Kelvin probe force microscopy of beveled semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002For the first time, we present the results of Kelvin probe force microscope studies on beveled samples. The ease of sample preparation and simplicity of the measurement make this technique a good candidate for the rapid characterization of semiconductor multilayers.
R. S. Ferguson, K. Fobelets, L. F. Cohen
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Kelvin Probe Force Microscopy Imaging Using Carbon Nanotube Probe
Japanese Journal of Applied Physics, 2001We have measured the potential profiles of the contact potential difference (CPD) between Al-evaporated substrates and dispersed carbon nanotubes (CNTs) by Kelvin probe force microscopy (KFM) using both a conventional Au-coated Si (Au–Si) probe and a CNT probe.
Satoru Takahashi +3 more
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