Results 71 to 80 of about 69,845 (112)

Photopolymer Flexographic Printing Plate Mold for PDMS Microfluidic Manufacture. [PDF]

open access: yesPolymers (Basel)
Peñaherrera-Pazmiño AB   +3 more
europepmc   +1 more source

Promoting CO<sub>2</sub> reduction in the presence of oxygen with polymer-based gas diffusion electrodes.

open access: yesChem Catal
Van Daele S   +5 more
europepmc   +1 more source

Global Laminated Busbar Market: Driving High-Efficiency Power Distribution in EVs and Renewable Energy Systems (2023–2030)

open access: yes
The global Laminated Busbar Market was valued at USD 872.5 million in 2023 and is projected to reach USD 1,321.2 million by 2030, growing at a CAGR of 6.1% from 2024 to 2030. Laminated busbars, consisting of multiple conductive layers separated by insulation, are integral components in electrical power distribution systems, offering high-power density,
openaire   +2 more sources

Investigation, Evaluation, and Optimization of Stray Inductance in Laminated Busbar

IEEE Transactions on Power Electronics, 2014
Wiring inductance has a critical effect on electrical, thermal, and electromagnetic compatibility (EMC) performances in inverters. Therefore, the low stray inductance laminated busbar, as a state-of-the-art pathway interface, is widely used in high-power inverters.
Xuejun Pei, Cai Chen, Yong Kang
exaly   +2 more sources

Thermal Analysis of the Laminated Busbar System of a Multilevel Converter

IEEE Transactions on Power Electronics, 2016
Laminated busbar systems are commonly used in power electronic converters because of their low stray inductance. While the electromagnetic analysis of a busbar system is widely presented in the literature, there is a lack of accurate thermal modeling. In this paper, the thermal analysis of the busbar system is presented.
Juha Pyrhonen, Kirill Murashko
exaly   +2 more sources

Accurate Modeling of the Effective Parasitic Parameters for the Laminated Busbar Connected With Paralleled SiC MOSFETs

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance.
Wenjie Chen, Shaolin Yu
exaly   +2 more sources

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