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Photopolymer Flexographic Printing Plate Mold for PDMS Microfluidic Manufacture. [PDF]
Peñaherrera-Pazmiño AB +3 more
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Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]
Abdelali K +4 more
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Sustainable Management of Photovoltaic Waste Through Recycling and Material Use in the Construction Industry. [PDF]
Bulińska S, Sujak A, Pyzalski M.
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The global Laminated Busbar Market was valued at USD 872.5 million in 2023 and is projected to reach USD 1,321.2 million by 2030, growing at a CAGR of 6.1% from 2024 to 2030. Laminated busbars, consisting of multiple conductive layers separated by insulation, are integral components in electrical power distribution systems, offering high-power density,
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Thermal Annealing Effect on Elastoplastic Behaviour of Al/Cu Bimetal during Three-Point Bending. [PDF]
Uścinowicz R.
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Laminated Busbar Design for High-Speed Switching of Power Conversion Circuits
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Investigation, Evaluation, and Optimization of Stray Inductance in Laminated Busbar
IEEE Transactions on Power Electronics, 2014Wiring inductance has a critical effect on electrical, thermal, and electromagnetic compatibility (EMC) performances in inverters. Therefore, the low stray inductance laminated busbar, as a state-of-the-art pathway interface, is widely used in high-power inverters.
Xuejun Pei, Cai Chen, Yong Kang
exaly +2 more sources
Thermal Analysis of the Laminated Busbar System of a Multilevel Converter
IEEE Transactions on Power Electronics, 2016Laminated busbar systems are commonly used in power electronic converters because of their low stray inductance. While the electromagnetic analysis of a busbar system is widely presented in the literature, there is a lack of accurate thermal modeling. In this paper, the thermal analysis of the busbar system is presented.
Juha Pyrhonen, Kirill Murashko
exaly +2 more sources
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance.
Wenjie Chen, Shaolin Yu
exaly +2 more sources
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance.
Wenjie Chen, Shaolin Yu
exaly +2 more sources

